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Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step
Yang, Bing1; Zhuang, Hao2; Li, Junhao1; Huang, Nan1; Liu, Lusheng1; Tai, Kaiping1; Jiang, Xin1,2
Corresponding AuthorJiang, Xin(xjiang@imr.ac.cn)
2016
Source PublicationCRYSTENGCOMM
ISSN1466-8033
Volume18Issue:36Pages:6817-6823
AbstractThe epitaxial deposition of a 3C-SiC film on a (100) Si substrate has been achieved at low temperature in one step using the microwave plasma CVD technique. A high density of defects such as misfit dislocations, stacking faults (SF) and twin boundaries (TB) is generated in the film. Defect-induced strain distribution in the 3C-SiC film is analyzed by the geometric phase analysis (GPA) method combined with X-ray diffraction (XRD) and Raman spectroscopy. The strain analysis at an atomic level reveals that periodical misfit dislocations at the interface generate high local compressive strain (>20%) around the core of the dislocations in the SiC film, relaxing the major part of the intrinsic strain. A highly compressive interfacial layer is found to form between the SiC film and Si substrate regardless of the carbonization temperature. This interfacial layer is linked with the carbonization step of the film growth process. In addition, twins and stacking faults provide a complementary route for strain relaxation during the film growth process. It is found that more strain is accommodated at the matrix/twin interface during twin nucleation rather than that at the growth stage. The atomic understanding of the effects of crystalline defects on strain relaxation will provide important implications for the control of defects in SiC films and design of high-performance SiC devices.
Funding OrganizationNational Natural Science Foundation of China ; Youth Innovation Program of the Institute of Metal Research
DOI10.1039/c6ce01409g
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51402309] ; Youth Innovation Program of the Institute of Metal Research[Y5NCA111A1] ; Youth Innovation Program of the Institute of Metal Research[Y6NC6F1161]
WOS Research AreaChemistry ; Crystallography
WOS SubjectChemistry, Multidisciplinary ; Crystallography
WOS IDWOS:000384235800007
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/122855
Collection中国科学院金属研究所
Corresponding AuthorJiang, Xin
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
Recommended Citation
GB/T 7714
Yang, Bing,Zhuang, Hao,Li, Junhao,et al. Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step[J]. CRYSTENGCOMM,2016,18(36):6817-6823.
APA Yang, Bing.,Zhuang, Hao.,Li, Junhao.,Huang, Nan.,Liu, Lusheng.,...&Jiang, Xin.(2016).Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step.CRYSTENGCOMM,18(36),6817-6823.
MLA Yang, Bing,et al."Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step".CRYSTENGCOMM 18.36(2016):6817-6823.
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