Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step

doi:10.1039/c6ce01409g

IMR OpenIR

	Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step
	Yang, Bing 1; Zhuang, Hao 2; Li, Junhao 1; Huang, Nan 1; Liu, Lusheng 1; Tai, Kaiping 1; Jiang, Xin 1,2
通讯作者	Jiang, Xin(xjiang@imr.ac.cn)
	2016
发表期刊	CRYSTENGCOMM
ISSN	1466-8033
卷号	18 期号:36 页码:6817-6823
摘要	The epitaxial deposition of a 3C-SiC film on a (100) Si substrate has been achieved at low temperature in one step using the microwave plasma CVD technique. A high density of defects such as misfit dislocations, stacking faults (SF) and twin boundaries (TB) is generated in the film. Defect-induced strain distribution in the 3C-SiC film is analyzed by the geometric phase analysis (GPA) method combined with X-ray diffraction (XRD) and Raman spectroscopy. The strain analysis at an atomic level reveals that periodical misfit dislocations at the interface generate high local compressive strain (>20%) around the core of the dislocations in the SiC film, relaxing the major part of the intrinsic strain. A highly compressive interfacial layer is found to form between the SiC film and Si substrate regardless of the carbonization temperature. This interfacial layer is linked with the carbonization step of the film growth process. In addition, twins and stacking faults provide a complementary route for strain relaxation during the film growth process. It is found that more strain is accommodated at the matrix/twin interface during twin nucleation rather than that at the growth stage. The atomic understanding of the effects of crystalline defects on strain relaxation will provide important implications for the control of defects in SiC films and design of high-performance SiC devices.
资助者	National Natural Science Foundation of China ; Youth Innovation Program of the Institute of Metal Research
DOI	10.1039/c6ce01409g
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51402309] ; Youth Innovation Program of the Institute of Metal Research[Y5NCA111A1] ; Youth Innovation Program of the Institute of Metal Research[Y6NC6F1161]
WOS研究方向	Chemistry ; Crystallography
WOS类目	Chemistry, Multidisciplinary ; Crystallography
WOS记录号	WOS:000384235800007
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/122855
专题	中国科学院金属研究所
通讯作者	Jiang, Xin
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
推荐引用方式 GB/T 7714	Yang, Bing,Zhuang, Hao,Li, Junhao,et al. Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step[J]. CRYSTENGCOMM,2016,18(36):6817-6823.
APA	Yang, Bing.,Zhuang, Hao.,Li, Junhao.,Huang, Nan.,Liu, Lusheng.,...&Jiang, Xin.(2016).Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step.CRYSTENGCOMM,18(36),6817-6823.
MLA	Yang, Bing,et al."Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step".CRYSTENGCOMM 18.36(2016):6817-6823.