| Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures | |
| Bai, Yu1,2; Wang, Zhan Jie1,2,3; Chen, Yan Na1; Cui, Jian Zhong3 | |
| Corresponding Author | Wang, Zhan Jie(wangzj@imr.ac.cn) |
| 2016-12-07 | |
| Source Publication | ACS APPLIED MATERIALS & INTERFACES
 |
| ISSN | 1944-8244 |
| Volume | 8Issue:48Pages:32948-32955 |
| Abstract | In this work, epitaxial Pb(Zr0.4Ti0.6)O-3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved. |
| Keyword | ferroelectric heterostructures resistive switching behaviors ON/OFF ratio ferroelectric polarization interfacial built-in field |
| Funding Organization | Hundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China |
| DOI | 10.1021/acsami.6b10992 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Hundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China[51172238] ; National Natural Science of Foundation of China[51502303] |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000389624600037 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/123412 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, Zhan Jie |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Northeastern Univ, Minist Educ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R China 3.Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Peoples R China |
| Recommended Citation GB/T 7714 | Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,et al. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(48):32948-32955. |
| APA | Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,&Cui, Jian Zhong.(2016).Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures.ACS APPLIED MATERIALS & INTERFACES,8(48),32948-32955. |
| MLA | Bai, Yu,et al."Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures".ACS APPLIED MATERIALS & INTERFACES 8.48(2016):32948-32955. |
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