IMR OpenIR
Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures
Bai, Yu1,2; Wang, Zhan Jie1,2,3; Chen, Yan Na1; Cui, Jian Zhong3
Corresponding AuthorWang, Zhan Jie(wangzj@imr.ac.cn)
2016-12-07
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume8Issue:48Pages:32948-32955
AbstractIn this work, epitaxial Pb(Zr0.4Ti0.6)O-3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved.
Keywordferroelectric heterostructures resistive switching behaviors ON/OFF ratio ferroelectric polarization interfacial built-in field
Funding OrganizationHundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China
DOI10.1021/acsami.6b10992
Indexed BySCI
Language英语
Funding ProjectHundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China[51172238] ; National Natural Science of Foundation of China[51502303]
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000389624600037
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:19[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/123412
Collection中国科学院金属研究所
Corresponding AuthorWang, Zhan Jie
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Northeastern Univ, Minist Educ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R China
3.Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Peoples R China
Recommended Citation
GB/T 7714
Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,et al. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(48):32948-32955.
APA Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,&Cui, Jian Zhong.(2016).Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures.ACS APPLIED MATERIALS & INTERFACES,8(48),32948-32955.
MLA Bai, Yu,et al."Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures".ACS APPLIED MATERIALS & INTERFACES 8.48(2016):32948-32955.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Bai, Yu]'s Articles
[Wang, Zhan Jie]'s Articles
[Chen, Yan Na]'s Articles
Baidu academic
Similar articles in Baidu academic
[Bai, Yu]'s Articles
[Wang, Zhan Jie]'s Articles
[Chen, Yan Na]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Bai, Yu]'s Articles
[Wang, Zhan Jie]'s Articles
[Chen, Yan Na]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.