Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures

doi:10.1021/acsami.6b10992

IMR OpenIR

	Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures
	Bai, Yu 1,2; Wang, Zhan Jie 1,2,3; Chen, Yan Na 1; Cui, Jian Zhong 3
通讯作者	Wang, Zhan Jie(wangzj@imr.ac.cn)
	2016-12-07
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	8 期号:48 页码:32948-32955
摘要	In this work, epitaxial Pb(Zr0.4Ti0.6)O-3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved.
关键词	ferroelectric heterostructures resistive switching behaviors ON/OFF ratio ferroelectric polarization interfacial built-in field
资助者	Hundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China
DOI	10.1021/acsami.6b10992
收录类别	SCI
语种	英语
资助项目	Hundred Talents Program of Chinese Academy of Sciences ; National Natural Science of Foundation of China[51172238] ; National Natural Science of Foundation of China[51502303]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000389624600037
出版者	AMER CHEMICAL SOC
引用统计	被引频次：42[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/123412
专题	中国科学院金属研究所
通讯作者	Wang, Zhan Jie
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Northeastern Univ, Minist Educ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R China 3.Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Peoples R China
推荐引用方式 GB/T 7714	Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,et al. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(48):32948-32955.
APA	Bai, Yu,Wang, Zhan Jie,Chen, Yan Na,&Cui, Jian Zhong.(2016).Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures.ACS APPLIED MATERIALS & INTERFACES,8(48),32948-32955.
MLA	Bai, Yu,et al."Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures".ACS APPLIED MATERIALS & INTERFACES 8.48(2016):32948-32955.