| Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions | |
| He, Shumin1,6; Liu, Guolei1; Zhu, Yinlian2; Ma, Xiuliang2; Sun, Jirong3,4; Kang, Shishou1; Yan, Shishen1; Chen, Yanxue1; Mei, Liangmo1; Jiao, Jun5 | |
| Corresponding Author | Liu, Guolei(liu-guolei@sdu.edu.cn) |
| 2017 | |
| Source Publication | RSC ADVANCES
 |
| ISSN | 2046-2069 |
| Volume | 7Issue:37Pages:22715-22721 |
| Abstract | Direct evidence of purely interfacial effects on resistance switching is demonstrated in Au/BiFeO3/Nd:SrTiO3(001) (Au/BFO/NSTO) Schottky junctions by reducing the thickness of ferroelectric interlayer BFO. The Au/BFO/NSTO junction shows large current rectification and hysteretic resistive switching behavior without any electroforming process. The conduction mechanism is dominated by interface-limited Fowler-Nordheim (FN) tunneling through a potential barrier formed at the BFO/NSTO interface. Measurements of polarization switching dynamics and capacitance-voltage characteristics provide direct evidence that the resistance switching in the Au/BFO/NSTO junction is ferroelectric and interfacially limited. The observed resistance switching behavior can be attributed to the ferroelectric polarization modulation of the barrier and depletion width of the p-n junction formed at the BFO/NSTO interface. |
| Funding Organization | State Key Project of Fundamental research of China ; National Natural Science Foundation of China ; 111 Project ; China electronics technology group corporation |
| DOI | 10.1039/c7ra02339a |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | State Key Project of Fundamental research of China[2015CB921402] ; National Natural Science Foundation of China[11374189] ; National Natural Science Foundation of China[51231007] ; National Natural Science Foundation of China[11627805] ; 111 Project[B13029] ; China electronics technology group corporation[46] ; China electronics technology group corporation[CJ20130304] |
| WOS Research Area | Chemistry |
| WOS Subject | Chemistry, Multidisciplinary |
| WOS ID | WOS:000400338000012 |
| Publisher | ROYAL SOC CHEMISTRY |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/124568 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, Guolei |
| Affiliation | 1.Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shengyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 5.Portland State Univ, Dept Mech & Mat Engn, POB 751, Portland, OR 97207 USA 6.Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China |
| Recommended Citation GB/T 7714 | He, Shumin,Liu, Guolei,Zhu, Yinlian,et al. Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions[J]. RSC ADVANCES,2017,7(37):22715-22721. |
| APA | He, Shumin.,Liu, Guolei.,Zhu, Yinlian.,Ma, Xiuliang.,Sun, Jirong.,...&Jiao, Jun.(2017).Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions.RSC ADVANCES,7(37),22715-22721. |
| MLA | He, Shumin,et al."Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions".RSC ADVANCES 7.37(2017):22715-22721. |
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