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Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions
He, Shumin1,6; Liu, Guolei1; Zhu, Yinlian2; Ma, Xiuliang2; Sun, Jirong3,4; Kang, Shishou1; Yan, Shishen1; Chen, Yanxue1; Mei, Liangmo1; Jiao, Jun5
Corresponding AuthorLiu, Guolei(liu-guolei@sdu.edu.cn)
2017
Source PublicationRSC ADVANCES
ISSN2046-2069
Volume7Issue:37Pages:22715-22721
AbstractDirect evidence of purely interfacial effects on resistance switching is demonstrated in Au/BiFeO3/Nd:SrTiO3(001) (Au/BFO/NSTO) Schottky junctions by reducing the thickness of ferroelectric interlayer BFO. The Au/BFO/NSTO junction shows large current rectification and hysteretic resistive switching behavior without any electroforming process. The conduction mechanism is dominated by interface-limited Fowler-Nordheim (FN) tunneling through a potential barrier formed at the BFO/NSTO interface. Measurements of polarization switching dynamics and capacitance-voltage characteristics provide direct evidence that the resistance switching in the Au/BFO/NSTO junction is ferroelectric and interfacially limited. The observed resistance switching behavior can be attributed to the ferroelectric polarization modulation of the barrier and depletion width of the p-n junction formed at the BFO/NSTO interface.
Funding OrganizationState Key Project of Fundamental research of China ; National Natural Science Foundation of China ; 111 Project ; China electronics technology group corporation
DOI10.1039/c7ra02339a
Indexed BySCI
Language英语
Funding ProjectState Key Project of Fundamental research of China[2015CB921402] ; National Natural Science Foundation of China[11374189] ; National Natural Science Foundation of China[51231007] ; National Natural Science Foundation of China[11627805] ; 111 Project[B13029] ; China electronics technology group corporation[46] ; China electronics technology group corporation[CJ20130304]
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000400338000012
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/124568
Collection中国科学院金属研究所
Corresponding AuthorLiu, Guolei
Affiliation1.Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shengyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
5.Portland State Univ, Dept Mech & Mat Engn, POB 751, Portland, OR 97207 USA
6.Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China
Recommended Citation
GB/T 7714
He, Shumin,Liu, Guolei,Zhu, Yinlian,et al. Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions[J]. RSC ADVANCES,2017,7(37):22715-22721.
APA He, Shumin.,Liu, Guolei.,Zhu, Yinlian.,Ma, Xiuliang.,Sun, Jirong.,...&Jiao, Jun.(2017).Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions.RSC ADVANCES,7(37),22715-22721.
MLA He, Shumin,et al."Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions".RSC ADVANCES 7.37(2017):22715-22721.
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