Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions

doi:10.1039/c7ra02339a

IMR OpenIR

	Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions
	He, Shumin 1,6; Liu, Guolei 1; Zhu, Yinlian 2; Ma, Xiuliang 2; Sun, Jirong 3,4; Kang, Shishou 1; Yan, Shishen 1; Chen, Yanxue 1; Mei, Liangmo 1; Jiao, Jun 5
通讯作者	Liu, Guolei(liu-guolei@sdu.edu.cn)
	2017
发表期刊	RSC ADVANCES
ISSN	2046-2069
卷号	7 期号:37 页码:22715-22721
摘要	Direct evidence of purely interfacial effects on resistance switching is demonstrated in Au/BiFeO3/Nd:SrTiO3(001) (Au/BFO/NSTO) Schottky junctions by reducing the thickness of ferroelectric interlayer BFO. The Au/BFO/NSTO junction shows large current rectification and hysteretic resistive switching behavior without any electroforming process. The conduction mechanism is dominated by interface-limited Fowler-Nordheim (FN) tunneling through a potential barrier formed at the BFO/NSTO interface. Measurements of polarization switching dynamics and capacitance-voltage characteristics provide direct evidence that the resistance switching in the Au/BFO/NSTO junction is ferroelectric and interfacially limited. The observed resistance switching behavior can be attributed to the ferroelectric polarization modulation of the barrier and depletion width of the p-n junction formed at the BFO/NSTO interface.
资助者	State Key Project of Fundamental research of China ; National Natural Science Foundation of China ; 111 Project ; China electronics technology group corporation
DOI	10.1039/c7ra02339a
收录类别	SCI
语种	英语
资助项目	State Key Project of Fundamental research of China[2015CB921402] ; National Natural Science Foundation of China[11374189] ; National Natural Science Foundation of China[51231007] ; National Natural Science Foundation of China[11627805] ; 111 Project[B13029] ; China electronics technology group corporation[46] ; China electronics technology group corporation[CJ20130304]
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000400338000012
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：22[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/124568
专题	中国科学院金属研究所
通讯作者	Liu, Guolei
作者单位	1.Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shengyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 5.Portland State Univ, Dept Mech & Mat Engn, POB 751, Portland, OR 97207 USA 6.Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	He, Shumin,Liu, Guolei,Zhu, Yinlian,et al. Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions[J]. RSC ADVANCES,2017,7(37):22715-22721.
APA	He, Shumin.,Liu, Guolei.,Zhu, Yinlian.,Ma, Xiuliang.,Sun, Jirong.,...&Jiao, Jun.(2017).Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions.RSC ADVANCES,7(37),22715-22721.
MLA	He, Shumin,et al."Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions".RSC ADVANCES 7.37(2017):22715-22721.