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Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects
Zheng, Lili1,2; Hua, Qingsong1; Li, Xichao2,3; Li, Meishuan2; Qian, Yuhai2; Xu, Jingjun2; Dai, Zuoqiang1; Chen, Tao1; Zhang, Jianmin1; Zhang, Hongxin1
Corresponding AuthorZheng, Lili() ; Li, Xichao(lixc@qibebt.ac.cn)
2017
Source PublicationRSC ADVANCES
ISSN2046-2069
Volume7Issue:67Pages:42350-42356
AbstractThe oxidation behaviours and electrical properties of 5 at% Ta doped Ti3SiC2 solid solution have been investigated at 800 degrees C in air for up to 500 h. The oxidation kinetics of (Ti0.95Ta0.05)(3)SiC2 follows a parabolic law. The oxidation rate constant is 7.33 x 10(-14) g(2) cm(-4) s(-1), which is lower than those of Ti3SiC2, (Ti0.95Nb0.05)(3)SiC2 and Crofer 22 APU. Ta doped r-TiO2 formed (Ti0.95Ta0.05)(3)SiC2 during the oxidation process. Ta doping can limit the outward diffusion of Ti by decreasing the native Ti interstitials concentration and simultaneously restraining the inward diffusion of oxygen by decreasing the O vacancy concentration. As a result, the oxidation resistance is significantly improved and the oxide scale structure of Ti3SiC2 changes from a double-layer to a monolithic layer. The ASR of (Ti0.95Ta0.05)(3)SiC2 after oxidation at 800 degrees C in air for 500 h is 29.5 mU cm(2), which is much lower than that of Ti3SiC2. Ta doping can increase the electron concentration in r-TiO2 and thereby increase the electrical conductivity of r-TiO2. Therefore, the ASR of (Ti0.95Ta0.05)(3)SiC2 after oxidation is lower compared to that of Ti3SiC2.
Funding OrganizationNational Science Foundation of China ; Scientific Research Start-up Fund of Qingdao University
DOI10.1039/c7ra07215e
Indexed BySCI
Language英语
Funding ProjectNational Science Foundation of China[51271191] ; National Science Foundation of China[51571205] ; National Science Foundation of China[41406106] ; Scientific Research Start-up Fund of Qingdao University[41117010089]
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000409147500044
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/125006
Collection中国科学院金属研究所
Corresponding AuthorZheng, Lili; Li, Xichao
Affiliation1.Qingdao Univ, Coll Mech & Elect Engn, Power & Energy Storage Syst Res Ctr, Qingdao 266071, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China
Recommended Citation
GB/T 7714
Zheng, Lili,Hua, Qingsong,Li, Xichao,et al. Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects[J]. RSC ADVANCES,2017,7(67):42350-42356.
APA Zheng, Lili.,Hua, Qingsong.,Li, Xichao.,Li, Meishuan.,Qian, Yuhai.,...&Zhang, Hongxin.(2017).Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects.RSC ADVANCES,7(67),42350-42356.
MLA Zheng, Lili,et al."Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects".RSC ADVANCES 7.67(2017):42350-42356.
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