IMR OpenIR
High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method
Wu, Fanqi1; Chen, Liang2; Zhang, Anyi1; Hong, Yi-Lun5,6; Shih, Nai-Yun1; Cho, Seong-Yong7,8; Drake, Gryphon A.7,8; Fleetham, Tyler3; Cong, Sen2; Cao, Xuan1; Liu, Qingzhou1; Liu, Yihang2; Xu, Chi4; Ma, Yuqiang4; Shim, Moonsub7,8; Thompson, Mark E.3; Ren, Wencai5; Cheng, Hui-Ming5; Zhou, Chongwu1,2
Corresponding AuthorZhou, Chongwu(chongwuz@usc.edu)
2017-12-01
Source PublicationACS NANO
ISSN1936-0851
Volume11Issue:12Pages:12536-12546
AbstractPrinting technology has potential to offer a cost-effective and scalable way to fabricate electronic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, limited by the registration accuracy and resolution of printing, the previously reported printed TMDC field-effect transistors (FETs) have relatively long channel lengths (13-200 mu m), thus suffering low current-driving capabilities (<= 0.02 mu A/mu m). Here, we report a "flood-dike" self-aligned printing technique that allows the formation of source/drain metal contacts on TMDC materials with sub micrometer channel lengths in a reliable way. This self-aligned printing technique involves three steps: (0 printing of gold ink on a WSe2 flake to form the first gold electrode, (ii) modifying the surface of the first gold electrode with a self assembled monolayer (SAM) to lower the surface tension and render the surface hydrophobic, and (iii) printing of gold ink close to the SAM-treated first electrode at a certain distance. During the third step, the gold ink would first spread toward the edge of the first electrode and then get stopped by the hydrophobic SAM coating, ending up forming a sub-micrometer channel. With this printing technique, we have successfully downscaled the channel length to,similar to 750nm and achieved enhanced on-state current densities of similar to 0.64 mu A/mu m (average) and high on/off current ratios of similar to 3 x 10(5) (average). Furthermore, with our high-performance printed WSe2 FETs, driving capabilities for quantum-dot light-emitting diodes (LEDs), inorganic LEDs, and organic LEDs have been demonstrated, which reveals the potential of using printed TMDC electronics for display backplane applications.
Keywordtungsten diselenides transition metal dichalcogenides TMDC two-dimensional chemical vapor deposition printing sub-micrometer channel
Funding OrganizationKing Abdulaziz City for Science and Technology (KACST) ; National Natural Science Foundation of China ; National Science Foundation ; Universal Display Corporation
DOI10.1021/acsnano.7b06654
Indexed BySCI
Language英语
Funding ProjectKing Abdulaziz City for Science and Technology (KACST) ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Science Foundation[DMR-1507170] ; Universal Display Corporation
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000418990200082
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/125638
Collection中国科学院金属研究所
Corresponding AuthorZhou, Chongwu
Affiliation1.Univ Southern Calif, Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA
2.Univ Southern Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
3.Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
4.Univ Southern Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA
5.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
6.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
7.Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
8.Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
Recommended Citation
GB/T 7714
Wu, Fanqi,Chen, Liang,Zhang, Anyi,et al. High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method[J]. ACS NANO,2017,11(12):12536-12546.
APA Wu, Fanqi.,Chen, Liang.,Zhang, Anyi.,Hong, Yi-Lun.,Shih, Nai-Yun.,...&Zhou, Chongwu.(2017).High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method.ACS NANO,11(12),12536-12546.
MLA Wu, Fanqi,et al."High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method".ACS NANO 11.12(2017):12536-12546.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wu, Fanqi]'s Articles
[Chen, Liang]'s Articles
[Zhang, Anyi]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wu, Fanqi]'s Articles
[Chen, Liang]'s Articles
[Zhang, Anyi]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wu, Fanqi]'s Articles
[Chen, Liang]'s Articles
[Zhang, Anyi]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.