High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method

doi:10.1021/acsnano.7b06654

IMR OpenIR

	High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method
	Wu, Fanqi 1; Chen, Liang 2; Zhang, Anyi 1; Hong, Yi-Lun 5,6; Shih, Nai-Yun 1; Cho, Seong-Yong 7,8; Drake, Gryphon A.7,8; Fleetham, Tyler 3; Cong, Sen 2; Cao, Xuan 1; Liu, Qingzhou 1; Liu, Yihang 2; Xu, Chi 4; Ma, Yuqiang 4; Shim, Moonsub 7,8; Thompson, Mark E.3; Ren, Wencai 5; Cheng, Hui-Ming 5; Zhou, Chongwu 1,2
通讯作者	Zhou, Chongwu(chongwuz@usc.edu)
	2017-12-01
发表期刊	ACS NANO
ISSN	1936-0851
卷号	11 期号:12 页码:12536-12546
摘要	Printing technology has potential to offer a cost-effective and scalable way to fabricate electronic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, limited by the registration accuracy and resolution of printing, the previously reported printed TMDC field-effect transistors (FETs) have relatively long channel lengths (13-200 mu m), thus suffering low current-driving capabilities (<= 0.02 mu A/mu m). Here, we report a "flood-dike" self-aligned printing technique that allows the formation of source/drain metal contacts on TMDC materials with sub micrometer channel lengths in a reliable way. This self-aligned printing technique involves three steps: (0 printing of gold ink on a WSe2 flake to form the first gold electrode, (ii) modifying the surface of the first gold electrode with a self assembled monolayer (SAM) to lower the surface tension and render the surface hydrophobic, and (iii) printing of gold ink close to the SAM-treated first electrode at a certain distance. During the third step, the gold ink would first spread toward the edge of the first electrode and then get stopped by the hydrophobic SAM coating, ending up forming a sub-micrometer channel. With this printing technique, we have successfully downscaled the channel length to,similar to 750nm and achieved enhanced on-state current densities of similar to 0.64 mu A/mu m (average) and high on/off current ratios of similar to 3 x 10(5) (average). Furthermore, with our high-performance printed WSe2 FETs, driving capabilities for quantum-dot light-emitting diodes (LEDs), inorganic LEDs, and organic LEDs have been demonstrated, which reveals the potential of using printed TMDC electronics for display backplane applications.
关键词	tungsten diselenides transition metal dichalcogenides TMDC two-dimensional chemical vapor deposition printing sub-micrometer channel
资助者	King Abdulaziz City for Science and Technology (KACST) ; National Natural Science Foundation of China ; National Science Foundation ; Universal Display Corporation
DOI	10.1021/acsnano.7b06654
收录类别	SCI
语种	英语
资助项目	King Abdulaziz City for Science and Technology (KACST) ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Science Foundation[DMR-1507170] ; Universal Display Corporation
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000418990200082
出版者	AMER CHEMICAL SOC
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/125638
专题	中国科学院金属研究所
通讯作者	Zhou, Chongwu
作者单位	1.Univ Southern Calif, Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA 2.Univ Southern Calif, Dept Elect Engn, Los Angeles, CA 90089 USA 3.Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USA 4.Univ Southern Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA 5.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 6.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 7.Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA 8.Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
推荐引用方式 GB/T 7714	Wu, Fanqi,Chen, Liang,Zhang, Anyi,et al. High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method[J]. ACS NANO,2017,11(12):12536-12546.
APA	Wu, Fanqi.,Chen, Liang.,Zhang, Anyi.,Hong, Yi-Lun.,Shih, Nai-Yun.,...&Zhou, Chongwu.(2017).High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method.ACS NANO,11(12),12536-12546.
MLA	Wu, Fanqi,et al."High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood Dike Printing Method".ACS NANO 11.12(2017):12536-12546.