| Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory | |
| Zhang, Ting; Song, Zhitang; Liu, Bo; Feng, Songlin; Chen, Bomy | |
| Corresponding Author | Zhang, Ting(tzhang@mail.sim.ac.cn) |
| 2007-06-01 | |
| Source Publication | SOLID-STATE ELECTRONICS
 |
| ISSN | 0038-1101 |
| Volume | 51Issue:6Pages:950-954 |
| Abstract | A wide band-gap phase change material Si2Sb2Te5 for chalcogenide random access memory application was investigated. The material possesses a low threshold current from amorphous to polycrystalline state in voltage-current measurement, and shows a good data retention. Band-gap width of the amorphous and polycrystalline Si2Sb2Te5 are determined to be 0.89 and 0.62 eV by means of Fourier Transform Infrared Spectroscopy. Chalcogenide random access memory device with bottom electrode contact of 260 nm in diameter was fabricated and characterized. With a 50 ns width voltage pulse, RESET and SET voltage values of 3.2 and 1.4 V were achieved. (c) 2007 Elsevier Ltd. All rights reserved. |
| Keyword | phase change chalcogenide random access memory Si2Sb2Te5 |
| DOI | 10.1016/j.sse.2007.03.016 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Engineering ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000248173700021 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/126203 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhang, Ting |
| Affiliation | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China 2.Grad Sch Chinese Acad Sci, Beijing 100049, Peoples R China 3.Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA |
| Recommended Citation GB/T 7714 | Zhang, Ting,Song, Zhitang,Liu, Bo,et al. Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory[J]. SOLID-STATE ELECTRONICS,2007,51(6):950-954. |
| APA | Zhang, Ting,Song, Zhitang,Liu, Bo,Feng, Songlin,&Chen, Bomy.(2007).Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory.SOLID-STATE ELECTRONICS,51(6),950-954. |
| MLA | Zhang, Ting,et al."Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory".SOLID-STATE ELECTRONICS 51.6(2007):950-954. |
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