Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory

doi:10.1016/j.sse.2007.03.016

IMR OpenIR

	Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory
	Zhang, Ting ; Song, Zhitang ; Liu, Bo ; Feng, Songlin ; Chen, Bomy
通讯作者	Zhang, Ting(tzhang@mail.sim.ac.cn)
	2007-06-01
发表期刊	SOLID-STATE ELECTRONICS
ISSN	0038-1101
卷号	51 期号:6 页码:950-954
摘要	A wide band-gap phase change material Si2Sb2Te5 for chalcogenide random access memory application was investigated. The material possesses a low threshold current from amorphous to polycrystalline state in voltage-current measurement, and shows a good data retention. Band-gap width of the amorphous and polycrystalline Si2Sb2Te5 are determined to be 0.89 and 0.62 eV by means of Fourier Transform Infrared Spectroscopy. Chalcogenide random access memory device with bottom electrode contact of 260 nm in diameter was fabricated and characterized. With a 50 ns width voltage pulse, RESET and SET voltage values of 3.2 and 1.4 V were achieved. (c) 2007 Elsevier Ltd. All rights reserved.
关键词	phase change chalcogenide random access memory Si2Sb2Te5
DOI	10.1016/j.sse.2007.03.016
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000248173700021
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：37[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/126203
专题	中国科学院金属研究所
通讯作者	Zhang, Ting
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China 2.Grad Sch Chinese Acad Sci, Beijing 100049, Peoples R China 3.Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA
推荐引用方式 GB/T 7714	Zhang, Ting,Song, Zhitang,Liu, Bo,et al. Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory[J]. SOLID-STATE ELECTRONICS,2007,51(6):950-954.
APA	Zhang, Ting,Song, Zhitang,Liu, Bo,Feng, Songlin,&Chen, Bomy.(2007).Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory.SOLID-STATE ELECTRONICS,51(6),950-954.
MLA	Zhang, Ting,et al."Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory".SOLID-STATE ELECTRONICS 51.6(2007):950-954.