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Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory
Zhang, Ting; Song, Zhitang; Liu, Bo; Feng, Songlin; Chen, Bomy
Corresponding AuthorZhang, Ting(tzhang@mail.sim.ac.cn)
2007-06-01
Source PublicationSOLID-STATE ELECTRONICS
ISSN0038-1101
Volume51Issue:6Pages:950-954
AbstractA wide band-gap phase change material Si2Sb2Te5 for chalcogenide random access memory application was investigated. The material possesses a low threshold current from amorphous to polycrystalline state in voltage-current measurement, and shows a good data retention. Band-gap width of the amorphous and polycrystalline Si2Sb2Te5 are determined to be 0.89 and 0.62 eV by means of Fourier Transform Infrared Spectroscopy. Chalcogenide random access memory device with bottom electrode contact of 260 nm in diameter was fabricated and characterized. With a 50 ns width voltage pulse, RESET and SET voltage values of 3.2 and 1.4 V were achieved. (c) 2007 Elsevier Ltd. All rights reserved.
Keywordphase change chalcogenide random access memory Si2Sb2Te5
DOI10.1016/j.sse.2007.03.016
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000248173700021
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:36[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/126205
Collection中国科学院金属研究所
Corresponding AuthorZhang, Ting
Affiliation1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
2.Grad Sch Chinese Acad Sci, Beijing 100049, Peoples R China
3.Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA
Recommended Citation
GB/T 7714
Zhang, Ting,Song, Zhitang,Liu, Bo,et al. Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory[J]. SOLID-STATE ELECTRONICS,2007,51(6):950-954.
APA Zhang, Ting,Song, Zhitang,Liu, Bo,Feng, Songlin,&Chen, Bomy.(2007).Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory.SOLID-STATE ELECTRONICS,51(6),950-954.
MLA Zhang, Ting,et al."Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory".SOLID-STATE ELECTRONICS 51.6(2007):950-954.
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