| In-situ control of different oxygen fugacity experimental study on the electrical conductivity of lherzolite at high temperature and high pressure | |
| Dai, Lidong1,2; Li, Heping1; Deng, Heming1,2; Liu, Congqiang3; Su, Genli1; Shan, Shuangming1,2; Zhang, Lei1,2; Wang, Riping1,2 | |
| Corresponding Author | Li, Heping(liheping@vip.skleg.cn) |
| 2008 | |
| Source Publication | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
 |
| ISSN | 0022-3697 |
| Volume | 69Issue:1Pages:101-110 |
| Abstract | At pressure 1.0-4.0 GPa and temperature 1073-1423 K and under the control of oxygen fugacity (Mo+MoO2, Fe+FeO and Ni+NiO), a YJ-3000t multi-anvil solid high-temperature and high-pressure apparatus and Solartron-1260 impedance/Gain-Phase analyzer were employed to analyze the electrical conductivity of lherzolite. The experimental results showed that: (1) within the range of the selected frequencies (10(3)-10(6) Hz), either as viewed from the relationship between the real or imaginary part of complex impedance and the frequency, or from the relationship between modulus, phase angle and frequency, it can be seen clearly that the complex impedance has a strong dependence on frequency; (2) with the rise of temperature (T), the electrical conductivity (sigma) increased, and Lg sigma and 1/T follows the Arrhenius relationship; (3) with the rise of pressure, the electrical conductivity decreased, and activation enthalpy and temperature-independent pre-exponential factor decreased as well. And the activation energy and activation bulk volume of the main charge carrier in the lherzolite have been obtained for the first time, which are 1.68 +/- 0.02 eV and 0.04 +/- 0.01 cm(3)/mol, respectively; (4) under the given pressure and temperature, the electrical conductivity tends to increase with increasing oxygen fugacity, and under the given pressure, the activation enthalpy and pre-exponential factor tend to decrease with the rise of oxygen fugacity; (5) at 2.0 GPa and the control of the three solid buffers, Mo+MoO2, Fe+FeO and Ni+NiO, the exponential factors of electrical conductivity variation range with oxygen fugacity are 1/3.19 - 1/3.67, and the theoretical model for the relationship between the electrical conductivity of lherzolite and the oxygen fugacity under high pressure has been established for the first time; (6) the electrical conduction mechanism of small polarons provides a reasonable explanation to the variation of conductivity of lherzolite with oxygen fugacity. (C) 2007 Elsevier Ltd. All rights reserved. |
| Keyword | electrical conductivity |
| DOI | 10.1016/j.jpcs.2007.08.003 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Chemistry ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Physics, Condensed Matter |
| WOS ID | WOS:000253181000016 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/126254 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Li, Heping |
| Affiliation | 1.Chinese Acad Sci, Inst Geochem, Lab Stud Earths Interior & Geofluids, Guiyang 550002, Peoples R China 2.Grad Sch Chinese Acad Sci, Beijing 100080, Peoples R China 3.Chinese Acad Sci, Inst Geochem, Guiyang 550002, Peoples R China |
| Recommended Citation GB/T 7714 | Dai, Lidong,Li, Heping,Deng, Heming,et al. In-situ control of different oxygen fugacity experimental study on the electrical conductivity of lherzolite at high temperature and high pressure[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2008,69(1):101-110. |
| APA | Dai, Lidong.,Li, Heping.,Deng, Heming.,Liu, Congqiang.,Su, Genli.,...&Wang, Riping.(2008).In-situ control of different oxygen fugacity experimental study on the electrical conductivity of lherzolite at high temperature and high pressure.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,69(1),101-110. |
| MLA | Dai, Lidong,et al."In-situ control of different oxygen fugacity experimental study on the electrical conductivity of lherzolite at high temperature and high pressure".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 69.1(2008):101-110. |
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