| Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy | |
| Liu, JP; Liu, XF; Li, JP; Sun, DZ; Kong, MY | |
| Corresponding Author | Liu, JP() |
| 1997-11-01 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 181Issue:4Pages:441-445 |
| Abstract | Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases. |
| Keyword | Si1-xGex alloys low-temperature epitaxy composition dependence growth kinetics |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:A1997YH19200017 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/126885 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, JP |
| Affiliation | CHINESE ACAD SCI,INST SEMICOND,CTR MAT SCI,POB 912,BEIJING 100083,PEOPLES R CHINA |
| Recommended Citation GB/T 7714 | Liu, JP,Liu, XF,Li, JP,et al. Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1997,181(4):441-445. |
| APA | Liu, JP,Liu, XF,Li, JP,Sun, DZ,&Kong, MY.(1997).Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,181(4),441-445. |
| MLA | Liu, JP,et al."Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 181.4(1997):441-445. |
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