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Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy
Liu, JP; Liu, XF; Li, JP; Sun, DZ; Kong, MY
Corresponding AuthorLiu, JP()
1997-11-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume181Issue:4Pages:441-445
AbstractGe composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.
KeywordSi1-xGex alloys low-temperature epitaxy composition dependence growth kinetics
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:A1997YH19200017
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/126885
Collection中国科学院金属研究所
Corresponding AuthorLiu, JP
AffiliationCHINESE ACAD SCI,INST SEMICOND,CTR MAT SCI,POB 912,BEIJING 100083,PEOPLES R CHINA
Recommended Citation
GB/T 7714
Liu, JP,Liu, XF,Li, JP,et al. Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1997,181(4):441-445.
APA Liu, JP,Liu, XF,Li, JP,Sun, DZ,&Kong, MY.(1997).Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,181(4),441-445.
MLA Liu, JP,et al."Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 181.4(1997):441-445.
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