Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

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	Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy
	Liu, JP; Liu, XF; Li, JP; Sun, DZ; Kong, MY
通讯作者	Liu, JP()
	1997-11-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	181 期号:4 页码:441-445
摘要	Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.
关键词	Si1-xGex alloys low-temperature epitaxy composition dependence growth kinetics
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:A1997YH19200017
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/126885
专题	中国科学院金属研究所
通讯作者	Liu, JP
作者单位	CHINESE ACAD SCI,INST SEMICOND,CTR MAT SCI,POB 912,BEIJING 100083,PEOPLES R CHINA
推荐引用方式 GB/T 7714	Liu, JP,Liu, XF,Li, JP,et al. Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1997,181(4):441-445.
APA	Liu, JP,Liu, XF,Li, JP,Sun, DZ,&Kong, MY.(1997).Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,181(4),441-445.
MLA	Liu, JP,et al."Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 181.4(1997):441-445.