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Enhanced doping effect on tuning structural phases of monolayer antimony
Wang, Jizhang1,2,3,4; Yang, Teng3; Zhang, Zhidong3; Yang, Li1,2
Corresponding AuthorYang, Teng(yangteng@imr.ac.cn) ; Yang, Li(lyang@physics.wustl.edu)
2018-05-21
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume112Issue:21Pages:5
AbstractDoping is capable to control the atomistic structure, electronic structure, and even to dynamically realize a semiconductor-metal transition in two-dimensional (2D) transition metal dichalcogenides (TMDs). However, the high critical doping density (similar to 10(14) electron/cm(2)), compound nature, and relatively low carrier mobility of TMDs limits broader applications. Using first-principles calculations, we predict that, via a small transition potential, a substantially lower hole doping density (similar to 6 x 10(12) hole/cm(2)) can switch the ground-state structure of monolayer antimony from the hexagonal beta-phase, a 2D semiconductor with excellent transport performance and air stability but an indirect bandgap, to the orthorhombic alpha phase with a direct bandgap and potentially better carrier mobility. We further show that this structural engineering can be achieved by the established electrostatic doping, surface functional adsorption, or directly using graphene substrate. This gives hope to dynamically tuning and large-scale production of 2D single-element semiconductors that simultaneously exhibit remarkable transport and optical performance. Published by AIP Publishing.
Funding OrganizationNational Science Foundation (NSF) CAREER Grant ; NSF ; National Key R&D Program of China ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China ; outstanding students international exchange program of University of Science and Technology of China (USTC) ; China Scholarship Council
DOI10.1063/1.5028265
Indexed BySCI
Language英语
Funding ProjectNational Science Foundation (NSF) CAREER Grant[DMR-1455346] ; NSF[EFRI-2DARE-1542815] ; National Key R&D Program of China[2017YFA0206301] ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China[U1537204] ; outstanding students international exchange program of University of Science and Technology of China (USTC) ; China Scholarship Council
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000433140900028
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/128283
Collection中国科学院金属研究所
Corresponding AuthorYang, Teng; Yang, Li
Affiliation1.Washington Univ, Dept Phys, St Louis, MO 63136 USA
2.Washington Univ, Inst Mat Sci & Engn, St Louis, MO 63136 USA
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Wang, Jizhang,Yang, Teng,Zhang, Zhidong,et al. Enhanced doping effect on tuning structural phases of monolayer antimony[J]. APPLIED PHYSICS LETTERS,2018,112(21):5.
APA Wang, Jizhang,Yang, Teng,Zhang, Zhidong,&Yang, Li.(2018).Enhanced doping effect on tuning structural phases of monolayer antimony.APPLIED PHYSICS LETTERS,112(21),5.
MLA Wang, Jizhang,et al."Enhanced doping effect on tuning structural phases of monolayer antimony".APPLIED PHYSICS LETTERS 112.21(2018):5.
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