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Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3
Xue, Fei1,2; Zhang, Junwei1; Hu, Weijin3; Hsu, Wei-Ting4; Han, Ali1; Leung, Siu-Fung5; Huang, Jing-Kai1; Wan, Yi1; Liu, Shuhai6; Zhang, Junli1; He, Jr-Hau; Chang, Wen-Hao4; Wang, Zhong Lin2,7; Zhang, Xixiang1; Li, Lain-Jong1,8
Corresponding AuthorZhang, Xixiang(xixiang.zhang@kaust.edu.sa) ; Li, Lain-Jong(ljliv@tsmc.com)
2018-05-01
Source PublicationACS NANO
ISSN1936-0851
Volume12Issue:5Pages:4976-4983
AbstractPiezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer alpha-In2Se3. Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk alpha-In2Se3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d(33) piezoelectric coefficient of alpha-In2Se3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd even effect. In addition, we also demonstrate a type of alpha-In2Se3-based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in alpha-In2Se3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain tunable electronics/optoelectronics.
Keywordmultidirection piezoelectricity van der Waals crystal monolayer and bulk nanogenerator and electronic skin
Funding OrganizationKAUST
DOI10.1021/acsnano.8b02152
Indexed BySCI
Language英语
Funding ProjectKAUST
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000433404500098
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:54[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/128445
Collection中国科学院金属研究所
Corresponding AuthorZhang, Xixiang; Li, Lain-Jong
Affiliation1.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
2.Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 10083, Peoples R China
3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, IMR, Shenyang 110016, Liaoning, Peoples R China
4.Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
5.King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia
6.Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China
7.Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
8.TSMC, Corporate Res & Chief Technol Off, Hsinchu 30075, Taiwan
Recommended Citation
GB/T 7714
Xue, Fei,Zhang, Junwei,Hu, Weijin,et al. Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3[J]. ACS NANO,2018,12(5):4976-4983.
APA Xue, Fei.,Zhang, Junwei.,Hu, Weijin.,Hsu, Wei-Ting.,Han, Ali.,...&Li, Lain-Jong.(2018).Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3.ACS NANO,12(5),4976-4983.
MLA Xue, Fei,et al."Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3".ACS NANO 12.5(2018):4976-4983.
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