| Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure | |
| Chen, Mingjing1; Ning, Xingkun1; Fu, Guangsheng1; Wang, Shufang1; Wang, Fei2; Yu, Tao3; Liu, Peng1; Wang, Jianglong1; Liu, Wei2; Zhang, Zhidong2 | |
| Corresponding Author | Ning, Xingkun(xkning@alum.imr.ac.cn) ; Fu, Guangsheng(fugs@hbu.edu.cn) |
| 2018-07-01 | |
| Source Publication | APPLIED PHYSICS EXPRESS
 |
| ISSN | 1882-0778 |
| Volume | 11Issue:7Pages:5 |
| Abstract | Understanding and controlling the metal-insulator transition (MIT) can provide great opportunities for electronic devices. Here, artificial LaNiO3/(NiO)(n)/LaNiO3 has been synthesized. MIT temperatures have been tuned by changing the thickness of the artificial NiO insert layer. The Ni 2p core-level spectra and O K-edge have been investigated. The linear relationship between the hybridization T (or bandwidth W) and the MIT temperature has been clearly demonstrated. In this work, we realized the Mott ground state by modulating the parameters of T and the covalency W, which might be significant for the development of multifunctional materials. (C) 2018 The Japan Society of Applied Physics |
| Funding Organization | National Natural Science Foundation of China ; Nature Science Foundation of Hebei Province ; Department of Education of Hebei Province ; Graduate Student Innovation Fund Project in Hebei Province |
| DOI | 10.7567/APEX.11.075701 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[11604073] ; National Natural Science Foundation of China[51372064] ; Nature Science Foundation of Hebei Province[A2017201104] ; Nature Science Foundation of Hebei Province[E2017201227] ; Department of Education of Hebei Province[BJ2017046] ; Graduate Student Innovation Fund Project in Hebei Province[CXZZBS2017023] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000435632600001 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/128669 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Ning, Xingkun; Fu, Guangsheng |
| Affiliation | 1.Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China |
| Recommended Citation GB/T 7714 | Chen, Mingjing,Ning, Xingkun,Fu, Guangsheng,et al. Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure[J]. APPLIED PHYSICS EXPRESS,2018,11(7):5. |
| APA | Chen, Mingjing.,Ning, Xingkun.,Fu, Guangsheng.,Wang, Shufang.,Wang, Fei.,...&Zhang, Zhidong.(2018).Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure.APPLIED PHYSICS EXPRESS,11(7),5. |
| MLA | Chen, Mingjing,et al."Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure".APPLIED PHYSICS EXPRESS 11.7(2018):5. |
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