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Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure
Chen, Mingjing1; Ning, Xingkun1; Fu, Guangsheng1; Wang, Shufang1; Wang, Fei2; Yu, Tao3; Liu, Peng1; Wang, Jianglong1; Liu, Wei2; Zhang, Zhidong2
Corresponding AuthorNing, Xingkun(xkning@alum.imr.ac.cn) ; Fu, Guangsheng(fugs@hbu.edu.cn)
2018-07-01
Source PublicationAPPLIED PHYSICS EXPRESS
ISSN1882-0778
Volume11Issue:7Pages:5
AbstractUnderstanding and controlling the metal-insulator transition (MIT) can provide great opportunities for electronic devices. Here, artificial LaNiO3/(NiO)(n)/LaNiO3 has been synthesized. MIT temperatures have been tuned by changing the thickness of the artificial NiO insert layer. The Ni 2p core-level spectra and O K-edge have been investigated. The linear relationship between the hybridization T (or bandwidth W) and the MIT temperature has been clearly demonstrated. In this work, we realized the Mott ground state by modulating the parameters of T and the covalency W, which might be significant for the development of multifunctional materials. (C) 2018 The Japan Society of Applied Physics
Funding OrganizationNational Natural Science Foundation of China ; Nature Science Foundation of Hebei Province ; Department of Education of Hebei Province ; Graduate Student Innovation Fund Project in Hebei Province
DOI10.7567/APEX.11.075701
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[11604073] ; National Natural Science Foundation of China[51372064] ; Nature Science Foundation of Hebei Province[A2017201104] ; Nature Science Foundation of Hebei Province[E2017201227] ; Department of Education of Hebei Province[BJ2017046] ; Graduate Student Innovation Fund Project in Hebei Province[CXZZBS2017023]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000435632600001
PublisherIOP PUBLISHING LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/128669
Collection中国科学院金属研究所
Corresponding AuthorNing, Xingkun; Fu, Guangsheng
Affiliation1.Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Chen, Mingjing,Ning, Xingkun,Fu, Guangsheng,et al. Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure[J]. APPLIED PHYSICS EXPRESS,2018,11(7):5.
APA Chen, Mingjing.,Ning, Xingkun.,Fu, Guangsheng.,Wang, Shufang.,Wang, Fei.,...&Zhang, Zhidong.(2018).Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure.APPLIED PHYSICS EXPRESS,11(7),5.
MLA Chen, Mingjing,et al."Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure".APPLIED PHYSICS EXPRESS 11.7(2018):5.
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