Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure

doi:10.7567/APEX.11.075701

IMR OpenIR

	Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure
	Chen, Mingjing 1; Ning, Xingkun 1; Fu, Guangsheng 1; Wang, Shufang 1; Wang, Fei 2; Yu, Tao 3; Liu, Peng 1; Wang, Jianglong 1; Liu, Wei 2; Zhang, Zhidong 2
通讯作者	Ning, Xingkun(xkning@alum.imr.ac.cn) ; Fu, Guangsheng(fugs@hbu.edu.cn)
	2018-07-01
发表期刊	APPLIED PHYSICS EXPRESS
ISSN	1882-0778
卷号	11 期号:7 页码:5
摘要	Understanding and controlling the metal-insulator transition (MIT) can provide great opportunities for electronic devices. Here, artificial LaNiO3/(NiO)(n)/LaNiO3 has been synthesized. MIT temperatures have been tuned by changing the thickness of the artificial NiO insert layer. The Ni 2p core-level spectra and O K-edge have been investigated. The linear relationship between the hybridization T (or bandwidth W) and the MIT temperature has been clearly demonstrated. In this work, we realized the Mott ground state by modulating the parameters of T and the covalency W, which might be significant for the development of multifunctional materials. (C) 2018 The Japan Society of Applied Physics
资助者	National Natural Science Foundation of China ; Nature Science Foundation of Hebei Province ; Department of Education of Hebei Province ; Graduate Student Innovation Fund Project in Hebei Province
DOI	10.7567/APEX.11.075701
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[11604073] ; National Natural Science Foundation of China[51372064] ; Nature Science Foundation of Hebei Province[A2017201104] ; Nature Science Foundation of Hebei Province[E2017201227] ; Department of Education of Hebei Province[BJ2017046] ; Graduate Student Innovation Fund Project in Hebei Province[CXZZBS2017023]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000435632600001
出版者	IOP PUBLISHING LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/128669
专题	中国科学院金属研究所
通讯作者	Ning, Xingkun; Fu, Guangsheng
作者单位	1.Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Chen, Mingjing,Ning, Xingkun,Fu, Guangsheng,et al. Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure[J]. APPLIED PHYSICS EXPRESS,2018,11(7):5.
APA	Chen, Mingjing.,Ning, Xingkun.,Fu, Guangsheng.,Wang, Shufang.,Wang, Fei.,...&Zhang, Zhidong.(2018).Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure.APPLIED PHYSICS EXPRESS,11(7),5.
MLA	Chen, Mingjing,et al."Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure".APPLIED PHYSICS EXPRESS 11.7(2018):5.