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Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy
Ding, Li1; Ukhtary, Muhammad Shoufie2; Chubarov, Mikhail3; Choudhury, Tanushree H.3; Zhang, Fu4; Yang, Rui5; Zhang, Ao6; Fan, Jonathan A.5; Terrones, Mauricio4,7,8; Redwing, Joan M.3,4; Yang, Teng9; Li, Mingda10; Saito, Riichiro2; Huang, Shengxi1
Corresponding AuthorHuang, Shengxi(sjh5899@psu.edu)
2018-10-01
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN0018-9383
Volume65Issue:10Pages:4059-4067
AbstractIn 2-D van der Weals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on gold film at low- and high-frequency ranges by Raman spectroscopy. Nineteen Raman modes have been observed from the sample, including a new interlayer coupling mode at 28.8 cm(-1). Compared to reported experimental results of tungsten disulfide (WS2) on SiO2/Si substrates, the Raman spectrum for WS2 on hBN/Au emerges a blue shift of about 8 cm(-1). Furthermore, a remarkable enhancement of Raman intensity can be obtained when tuning hBN thickness in the heterostructure. Through systematic first-principles calculations, numerical simulations, and analytical calculations, we find that the 28.8 cm(-1) mode originates from the shearing motion between monolayer TMD and hBN layers. In addition, the gold substrate and hBN layers form an optical cavity and the cavity interference effects enhance the obtained Raman intensity. This paper demonstrates the novel vibrational modes of 2-D van der Weals heterostructure as an effective tool to characterize a variety of such heterostructures and reveals a new method to enhance the Raman response of 2-D materials.
Keyword2-D material interference effect low-frequency (LF) vibration Raman enhancement
Funding OrganizationElectrical Engineering Department, The Pennsylvania State University ; JSPS KAKENHI ; Pennsylvania State University 2-D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF ; National Science Foundation through the I/UCRC Center for Atomically Thin Multifunctional Coatings (ATOMIC) ; Air Force Office of Scientific Research Multidisciplinary University Research Initiative (MURI) ; National Key Program of China ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC, China ; Materials Research Institute, The Pennsylvania State University ; CASC, China
DOI10.1109/TED.2018.2847230
Indexed BySCI
Language英语
Funding ProjectElectrical Engineering Department, The Pennsylvania State University ; JSPS KAKENHI[JP18J10199] ; JSPS KAKENHI[JP18H01810] ; Pennsylvania State University 2-D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF[DMR-1539916] ; National Science Foundation through the I/UCRC Center for Atomically Thin Multifunctional Coatings (ATOMIC)[IIP-1540018] ; Air Force Office of Scientific Research Multidisciplinary University Research Initiative (MURI)[FA9550-161-0031] ; National Key Program of China[2017YFA0206301] ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC, China[U1537204] ; Materials Research Institute, The Pennsylvania State University ; CASC, China[U1537204]
WOS Research AreaEngineering ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Physics, Applied
WOS IDWOS:000445239700004
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation statistics
Cited Times:18[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/129496
Collection中国科学院金属研究所
Corresponding AuthorHuang, Shengxi
Affiliation1.Penn State Univ, Elect Engn Dept, University Pk, PA 16802 USA
2.Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
3.Penn State Univ, Mat Res Inst, Crystal Consortium Mat Innovat Platform 2D, University Pk, PA 16802 USA
4.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
5.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
6.Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
7.Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
8.Penn State Univ, Dept Chem, University Pk, PA 16802 USA
9.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
10.MIT, Dept Nucl Sci & Engn, 77 Massachusetts Ave, Cambridge, MA 02139 USA
Recommended Citation
GB/T 7714
Ding, Li,Ukhtary, Muhammad Shoufie,Chubarov, Mikhail,et al. Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65(10):4059-4067.
APA Ding, Li.,Ukhtary, Muhammad Shoufie.,Chubarov, Mikhail.,Choudhury, Tanushree H..,Zhang, Fu.,...&Huang, Shengxi.(2018).Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy.IEEE TRANSACTIONS ON ELECTRON DEVICES,65(10),4059-4067.
MLA Ding, Li,et al."Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy".IEEE TRANSACTIONS ON ELECTRON DEVICES 65.10(2018):4059-4067.
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