IMR OpenIR
Inversion domain boundaries in MoSe2 layers
Quang Duc Truong1; Nguyen Tuan Hung2; Nakayasu, Yuta1; Nayuki, Keiichiro3; Sasaki, Yoshikazu3; Kempaiah, Devaraju Murukanahally1; Yin, Li-Chang4; Tomai, Takaaki1; Saito, Riichiro2; Honma, Itaru1
Corresponding AuthorQuang Duc Truong(truong@tohoku.ac.jp) ; Honma, Itaru(itaru.honma.e8@tohoku.ac.jp)
2018
Source PublicationRSC ADVANCES
ISSN2046-2069
Volume8Issue:58Pages:33391-33397
AbstractStructural defects, including point defects, dislocation and planar defects, significantly affect the physical and chemical properties of low-dimensional materials, such as layered compounds. In particular, inversion domain boundary is an intrinsic defect surrounded by a 60 degrees grain boundary, which significantly influences electronic transport properties. We study atomic structures of the inversion domain grain boundaries (IDBs) in layered transition metal dichalcogenides (MoSe2 and MoS2) obtained by an exfoliation method, based on the aberration-corrected scanning transmission electron microscopy observation and density functional theory (DFT) calculation. The atomic-scale observation shows that the grain boundaries consist of two different types of 4-fold ring point shared and 8-fold ring edge shared chains. The results of DFT calculations indicate that the inversion domain grain boundary behaves as a metallic one-dimensional chain embedded in the semiconducting MoSe2 matrix with the occurrence of a new state within the band gap.
Funding OrganizationJapan Society for Promotion of Science (JSPS) ; Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) ; Core Technology Consortium for Advanced Energy Devices, Tohoku University, Japan ; ALCA-SPRING (ALCA-Specially Promoted Research for Innovative Next Generation Batteries) from Japan Science and Technology Agency (JST) ; JSPS KAKENHI
DOI10.1039/c8ra07205a
Indexed BySCI
Language英语
Funding ProjectJapan Society for Promotion of Science (JSPS)[PU15903] ; Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) ; Core Technology Consortium for Advanced Energy Devices, Tohoku University, Japan ; ALCA-SPRING (ALCA-Specially Promoted Research for Innovative Next Generation Batteries) from Japan Science and Technology Agency (JST) ; JSPS KAKENHI[JP18H01810] ; JSPS KAKENHI[JP18J10151]
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000448422800046
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/130086
Collection中国科学院金属研究所
Corresponding AuthorQuang Duc Truong; Honma, Itaru
Affiliation1.Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
2.Tohoku Univ, Dept Phys, Sendai, Miyagi 9808577, Japan
3.JEOL Ltd, Field Solut Div, Tokyo 1960022, Japan
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Quang Duc Truong,Nguyen Tuan Hung,Nakayasu, Yuta,et al. Inversion domain boundaries in MoSe2 layers[J]. RSC ADVANCES,2018,8(58):33391-33397.
APA Quang Duc Truong.,Nguyen Tuan Hung.,Nakayasu, Yuta.,Nayuki, Keiichiro.,Sasaki, Yoshikazu.,...&Honma, Itaru.(2018).Inversion domain boundaries in MoSe2 layers.RSC ADVANCES,8(58),33391-33397.
MLA Quang Duc Truong,et al."Inversion domain boundaries in MoSe2 layers".RSC ADVANCES 8.58(2018):33391-33397.
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