Inversion domain boundaries in MoSe2 layers

doi:10.1039/c8ra07205a

IMR OpenIR

	Inversion domain boundaries in MoSe2 layers
	Quang Duc Truong 1; Nguyen Tuan Hung 2; Nakayasu, Yuta 1; Nayuki, Keiichiro 3; Sasaki, Yoshikazu 3; Kempaiah, Devaraju Murukanahally 1; Yin, Li-Chang 4; Tomai, Takaaki 1; Saito, Riichiro 2; Honma, Itaru 1
通讯作者	Quang Duc Truong(truong@tohoku.ac.jp) ; Honma, Itaru(itaru.honma.e8@tohoku.ac.jp)
	2018
发表期刊	RSC ADVANCES
ISSN	2046-2069
卷号	8 期号:58 页码:33391-33397
摘要	Structural defects, including point defects, dislocation and planar defects, significantly affect the physical and chemical properties of low-dimensional materials, such as layered compounds. In particular, inversion domain boundary is an intrinsic defect surrounded by a 60 degrees grain boundary, which significantly influences electronic transport properties. We study atomic structures of the inversion domain grain boundaries (IDBs) in layered transition metal dichalcogenides (MoSe2 and MoS2) obtained by an exfoliation method, based on the aberration-corrected scanning transmission electron microscopy observation and density functional theory (DFT) calculation. The atomic-scale observation shows that the grain boundaries consist of two different types of 4-fold ring point shared and 8-fold ring edge shared chains. The results of DFT calculations indicate that the inversion domain grain boundary behaves as a metallic one-dimensional chain embedded in the semiconducting MoSe2 matrix with the occurrence of a new state within the band gap.
资助者	Japan Society for Promotion of Science (JSPS) ; Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) ; Core Technology Consortium for Advanced Energy Devices, Tohoku University, Japan ; ALCA-SPRING (ALCA-Specially Promoted Research for Innovative Next Generation Batteries) from Japan Science and Technology Agency (JST) ; JSPS KAKENHI
DOI	10.1039/c8ra07205a
收录类别	SCI
语种	英语
资助项目	Japan Society for Promotion of Science (JSPS)[PU15903] ; Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) ; Core Technology Consortium for Advanced Energy Devices, Tohoku University, Japan ; ALCA-SPRING (ALCA-Specially Promoted Research for Innovative Next Generation Batteries) from Japan Science and Technology Agency (JST) ; JSPS KAKENHI[JP18H01810] ; JSPS KAKENHI[JP18J10151]
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000448422800046
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/130086
专题	中国科学院金属研究所
通讯作者	Quang Duc Truong; Honma, Itaru
作者单位	1.Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan 2.Tohoku Univ, Dept Phys, Sendai, Miyagi 9808577, Japan 3.JEOL Ltd, Field Solut Div, Tokyo 1960022, Japan 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Quang Duc Truong,Nguyen Tuan Hung,Nakayasu, Yuta,et al. Inversion domain boundaries in MoSe2 layers[J]. RSC ADVANCES,2018,8(58):33391-33397.
APA	Quang Duc Truong.,Nguyen Tuan Hung.,Nakayasu, Yuta.,Nayuki, Keiichiro.,Sasaki, Yoshikazu.,...&Honma, Itaru.(2018).Inversion domain boundaries in MoSe2 layers.RSC ADVANCES,8(58),33391-33397.
MLA	Quang Duc Truong,et al."Inversion domain boundaries in MoSe2 layers".RSC ADVANCES 8.58(2018):33391-33397.