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Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films
Wang, Zhenhua1; Wei, Lingnan1,2; Li, Mingze1,2; Zhang, Zhidong1; Gao, Xuan P. A.3
Corresponding AuthorWang, Zhenhua(zhwang@imr.ac.cn)
2018-12-01
Source PublicationPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
ISSN0370-1972
Volume255Issue:12Pages:8
AbstractThe magneto-transport properties of a series of Bi-2(TexSe1-x)(3) films are investigated. It is seen that the doped samples develop an insulating behavior at low temperatures upon the increasing doping level as compared to the pristine sample Bi2Se3. The field evolution of the magneto-resistance (MR) under perpendicular and parallel magnetic fields for Bi-2(TexSe1-x)(3) films with x = 0, 0.1, 0.24, 0.4, and 0.6 at temperatures from 2 to 200 K is investigated. A low field cusp behavior appears in MR data of Bi-2(Te0.1Se0.9)(3) film, which is associated with the weak anti-localization (WAL). In Bi-2(Te0.4Se0.6)(3) films, MR with perpendicular and parallel magnetic fields shows signatures of WAL at low magnetic fields. A remarkable negative behavior, similar to weak localization (WL), under a high magnetic field parallel to the film surface is found which is dominated by bulk-state electrons. MR of Bi-2(Te0.6Se0.4)(3) film reveals a low-field WAL behavior and a high-field parabolic behavior, revealing a two-dimensional magneto-transport property.
KeywordBi2Se3 localization magnetic-transport properties Te-doped films weak antilocalization
Funding OrganizationNational Natural Science Foundation of China ; National Basic Research Program ; National Science Foundation
DOI10.1002/pssb.201800272
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51522104] ; National Natural Science Foundation of China[51331006] ; National Basic Research Program[2017YFA0206302] ; National Science Foundation[DMR-1151534]
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000453382600022
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/130821
Collection中国科学院金属研究所
Corresponding AuthorWang, Zhenhua
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
Recommended Citation
GB/T 7714
Wang, Zhenhua,Wei, Lingnan,Li, Mingze,et al. Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2018,255(12):8.
APA Wang, Zhenhua,Wei, Lingnan,Li, Mingze,Zhang, Zhidong,&Gao, Xuan P. A..(2018).Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,255(12),8.
MLA Wang, Zhenhua,et al."Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 255.12(2018):8.
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