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Extrinsic Parting Limit for Dealloying of Cu-Rh
Liu, Feng1,2; Jin, Hai-Jun1
Corresponding AuthorJin, Hai-Jun(hjjin@imr.ac.cn)
2018-12-14
Source PublicationJOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN0013-4651
Volume165Issue:16Pages:C999-C1006
AbstractElectrochemical dealloying of Cu- Rh alloys was systematically studied in 1 M H2SO4 aqueous solution in order to clarify the effect of Rh oxide passivation on dealloying behavior. Active dealloying, oxide passivation and transpassive dealloying regions were consecutively identified in their anodic polarization curves. The dealloying is rapid in both active and transpassive regions. The active dealloying region vanishes as Cu content decreases to below 85 at.%. When the Cu content is further decreased to below 75 at.%, the transpassive dealloying also ceases and the material becomes "stainless". This indicates that the parting limit for the dealloying of Cu-Rh is located at similar to 75 at.%, which is much higher than that of Au-Ag and other alloys that do not involve oxide passivation in dealloying. The high parting limit for Cu-Rh is associated with a passive layer of Rh oxide formed by corrosion, which hinders dealloying and nanoporosity evolution processes. The parting limit identified here may be an extrinsic property. The intrinsic parting limit of this alloy, i.e., the threshold composition below which the dealloying is hindered by a passive layer of Rh (instead of oxide passivation), could be lower-it may be obtained by avoiding any form of oxide passivation in corrosion. Moreover, all dealloyed nanoporous Rh shows a face centered cubic crystal structure, in contrast to the hexagonal close packed structure reported in Rh nanoparticles. (c) The Author(s) 2018. Published by ECS.
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China
DOI10.1149/2.0631816jes
Indexed BySCI
Language英语
Funding ProjectNational Key R&D Program of China[2017YFA0204401] ; National Natural Science Foundation of China[51571206]
WOS Research AreaElectrochemistry ; Materials Science
WOS SubjectElectrochemistry ; Materials Science, Coatings & Films
WOS IDWOS:000453347800001
PublisherELECTROCHEMICAL SOC INC
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/130852
Collection中国科学院金属研究所
Corresponding AuthorJin, Hai-Jun
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Univ Chinese Acad Sci, Beijing, Peoples R China
Recommended Citation
GB/T 7714
Liu, Feng,Jin, Hai-Jun. Extrinsic Parting Limit for Dealloying of Cu-Rh[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2018,165(16):C999-C1006.
APA Liu, Feng,&Jin, Hai-Jun.(2018).Extrinsic Parting Limit for Dealloying of Cu-Rh.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,165(16),C999-C1006.
MLA Liu, Feng,et al."Extrinsic Parting Limit for Dealloying of Cu-Rh".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 165.16(2018):C999-C1006.
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