Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films

doi:10.1088/1361-6528/ab13cf

IMR OpenIR

	Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films
	Zhang, Anqi 1,2; Wei, Feng 1,3; Yan, Chenhui 1,3; Wang, Fei 1,3; Ma, Song 1; Zhang, Zhidong 1
通讯作者	Ma, Song(songma@imr.ac.cn)
	2019-07-05
发表期刊	NANOTECHNOLOGY
ISSN	0957-4484
卷号	30 期号:27 页码:6
摘要	We report the magneotransport studies on the topological crystalline insulator (TCI) Pb1-xSnxTe (111) single crystal thin films grown by molecular beam epitaxy. By decreasing Sn content, an enhanced sheet resistance and decreased hole density are observed in Pb1-xSnxTe (111) thin films A weak antilocalization likely related to the topological surface states is observed in transport of Pb1-xSnxTe (x > 0.4) thin films, whereas a weak localization is displayed in Pb1-xSnxTe (x < 0.4) thin films This tunable weak antilocalization to weak localization transition is attributed to the open of Dirac gap because of the topological phase transition in TCI Pb1-xSnxTe. Our research has a potential application in the tunable electronic and spintronic devices and is very significant to the fundamental research based on TCI Pb1-xSnxTe thin film.
关键词	topological crystalline insulator Pb1-xSnxTe (111) topological phase transition weak antilocalization weak localization
资助者	National Natural Science Foundation of China ; National Key R&D Program of China
DOI	10.1088/1361-6528/ab13cf
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51571195] ; National Natural Science Foundation of China[51871219] ; National Natural Science Foundation of China[51590883] ; National Key R&D Program of China[2017YFA0206301]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000465893800001
出版者	IOP PUBLISHING LTD
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/133051
专题	中国科学院金属研究所
通讯作者	Ma, Song
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Anqi,Wei, Feng,Yan, Chenhui,et al. Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films[J]. NANOTECHNOLOGY,2019,30(27):6.
APA	Zhang, Anqi,Wei, Feng,Yan, Chenhui,Wang, Fei,Ma, Song,&Zhang, Zhidong.(2019).Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films.NANOTECHNOLOGY,30(27),6.
MLA	Zhang, Anqi,et al."Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films".NANOTECHNOLOGY 30.27(2019):6.