| A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission | |
| Qi, Lin1; Chai, Zhaoyuan1; Yang, Huazhe2; Shahzad, M. Babar3; Qi, Yang1,4 | |
| Corresponding Author | Shahzad, M. Babar() ; Qi, Yang(qiyang@imp.neu.edu.cn) |
| 2019-07-15 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 793Pages:295-301 |
| Abstract | A novel fabrication of non-polar Sb-doped ZnO homojunction was realized via a facile and reproducible low-temperature aqueous solution deposition in the presence of Sb dopant dissolved in ethylene glycol (EG). The undoped non-polar ZnO films were introduced as the non-polar substrates for the non-polar growth of Sb-doped ZnO film as well as the SZO/ZnO homojunction. The parameters including the reaction time and dopant concentration for the synthesis of non-polar SZO/ZnO homojunction were identified. The existence and distribution of Sb dopant in SZO layer were confirmed by X-ray photoelectron spectroscopy (XPS) and elemental mapping analysis. The I-V measurement result indicated the p-type conduction of SZO layer and the synthesized p-SZO/n-ZnO homojunction with non-polar preferred orientations possessed both ultra-low turn-on voltage (1.5 V) and large rectification rate (>10(5)). The excitation of orange-red light emissions from deep-level energy band gap demonstrated the (Sb-Zn-xV(Zn)) complex defect pattern. This novel non-polar SZO/ZnO homojunction could be an excellent candidate for the applications of one-dimensional ZnO nanomaterials in the electronic/photoelectronic field. (C) 2019 Elsevier B.V. All rights reserved. |
| Keyword | Non-polar preferred orientation Sb-doped ZnO film Homojunction P-type conduction Acceptor-type defects |
| DOI | 10.1016/j.jallcom.2019.04.109 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000467696000033 |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/133328 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Shahzad, M. Babar; Qi, Yang |
| Affiliation | 1.Northeastern Univ, Inst Mat Phys & Chem, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China 2.China Med Univ, Dept Biophys, Sch Fundamental Sci, Shenyang 110122, Liaoning, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 4.Northeastern Univ, Key Lab Anisotropy & Texture Mat, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China |
| Recommended Citation GB/T 7714 | Qi, Lin,Chai, Zhaoyuan,Yang, Huazhe,et al. A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,793:295-301. |
| APA | Qi, Lin,Chai, Zhaoyuan,Yang, Huazhe,Shahzad, M. Babar,&Qi, Yang.(2019).A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission.JOURNAL OF ALLOYS AND COMPOUNDS,793,295-301. |
| MLA | Qi, Lin,et al."A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission".JOURNAL OF ALLOYS AND COMPOUNDS 793(2019):295-301. |
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