A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission

doi:10.1016/j.jallcom.2019.04.109

IMR OpenIR

	A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission
	Qi, Lin 1; Chai, Zhaoyuan 1; Yang, Huazhe 2; Shahzad, M. Babar 3; Qi, Yang 1,4
通讯作者	Shahzad, M. Babar() ; Qi, Yang(qiyang@imp.neu.edu.cn)
	2019-07-15
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	793 页码:295-301
摘要	A novel fabrication of non-polar Sb-doped ZnO homojunction was realized via a facile and reproducible low-temperature aqueous solution deposition in the presence of Sb dopant dissolved in ethylene glycol (EG). The undoped non-polar ZnO films were introduced as the non-polar substrates for the non-polar growth of Sb-doped ZnO film as well as the SZO/ZnO homojunction. The parameters including the reaction time and dopant concentration for the synthesis of non-polar SZO/ZnO homojunction were identified. The existence and distribution of Sb dopant in SZO layer were confirmed by X-ray photoelectron spectroscopy (XPS) and elemental mapping analysis. The I-V measurement result indicated the p-type conduction of SZO layer and the synthesized p-SZO/n-ZnO homojunction with non-polar preferred orientations possessed both ultra-low turn-on voltage (1.5 V) and large rectification rate (>10(5)). The excitation of orange-red light emissions from deep-level energy band gap demonstrated the (Sb-Zn-xV(Zn)) complex defect pattern. This novel non-polar SZO/ZnO homojunction could be an excellent candidate for the applications of one-dimensional ZnO nanomaterials in the electronic/photoelectronic field. (C) 2019 Elsevier B.V. All rights reserved.
关键词	Non-polar preferred orientation Sb-doped ZnO film Homojunction P-type conduction Acceptor-type defects
DOI	10.1016/j.jallcom.2019.04.109
收录类别	SCI
语种	英语
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000467696000033
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/133328
专题	中国科学院金属研究所
通讯作者	Shahzad, M. Babar; Qi, Yang
作者单位	1.Northeastern Univ, Inst Mat Phys & Chem, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China 2.China Med Univ, Dept Biophys, Sch Fundamental Sci, Shenyang 110122, Liaoning, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 4.Northeastern Univ, Key Lab Anisotropy & Texture Mat, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Qi, Lin,Chai, Zhaoyuan,Yang, Huazhe,et al. A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,793:295-301.
APA	Qi, Lin,Chai, Zhaoyuan,Yang, Huazhe,Shahzad, M. Babar,&Qi, Yang.(2019).A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission.JOURNAL OF ALLOYS AND COMPOUNDS,793,295-301.
MLA	Qi, Lin,et al."A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission".JOURNAL OF ALLOYS AND COMPOUNDS 793(2019):295-301.