Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates

doi:10.1016/j.carbon.2019.03.083

IMR OpenIR

	Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates
	Wei, Shijing 1,2,3,4; Ma, Lai-Peng 1; Chen, Mao-Lin 1,5; Liu, Zhibo 1; Ma, Wei 1,5; Sun, Dong-Ming 1,5; Cheng, Hui-Ming 1,2,5,6; Ren, Wencai 1
通讯作者	Cheng, Hui-Ming(cheng@imr.ac.cn) ; Ren, Wencai(wcren@imr.ac.cn)
	2019-07-01
发表期刊	CARBON
ISSN	0008-6223
卷号	148 页码:241-248
摘要	Metal-free growth of high-quality monolayer graphene films by chemical vapor deposition (CVD) on dielectric substrates is of great significance for the development of high-performance graphene-based electronic and optoelectronic devices. However, the existing CVD processes suffer from poor structural uniformity (or growth quality) and/or a slow growth rate due to the negligible catalytic activity of dielectric substrates. Here, we report a water-assisted CVD process for rapid growth of monolayer graphene film on SiO2/Si substrate without using metal catalysts or ultra-high temperature. Even trace amount of water enables the preferential formation of monolayer graphene films with significantly reduced structural defects. Particularly, this strategy enables the rapid growth of monolayer graphene by effectively lowering the growth kinetic barrier. We attribute the benefits of water on simultaneously improving the structural uniformity and growth rate to its mild oxidative effect and the role in accelerating the release of oxygen from the SiO2/Si substrate, respectively. Our work provides helpful information for efficient and controllable CVD growth of high-quality graphene on dielectric substrates. (C) 2019 Elsevier Ltd. All rights reserved.
资助者	Ministry of Science and Technology of China ; National Science Foundation of China ; Chinese Academy of Sciences ; Strategic Priority Research Programof Chinese Academy of Sciences
DOI	10.1016/j.carbon.2019.03.083
收录类别	SCI
语种	英语
资助项目	Ministry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001104] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51521091] ; National Science Foundation of China[51272256] ; National Science Foundation of China[61422406] ; National Science Foundation of China[61574143] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Chinese Academy of Sciences[KGZD-EW-T06] ; Chinese Academy of Sciences[XDPB06] ; Strategic Priority Research Programof Chinese Academy of Sciences[XDB30000000]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000468421900026
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：44[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/133359
专题	中国科学院金属研究所
通讯作者	Cheng, Hui-Ming; Ren, Wencai
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 6.Tsinghua Univ, Shenzhen Geim Graphene Ctr, TBSI, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Wei, Shijing,Ma, Lai-Peng,Chen, Mao-Lin,et al. Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates[J]. CARBON,2019,148:241-248.
APA	Wei, Shijing.,Ma, Lai-Peng.,Chen, Mao-Lin.,Liu, Zhibo.,Ma, Wei.,...&Ren, Wencai.(2019).Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates.CARBON,148,241-248.
MLA	Wei, Shijing,et al."Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates".CARBON 148(2019):241-248.