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Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric
You, Lu1,2; Zhang, Yang3; Zhou, Shuang1,4; Chaturvedi, Apoorva1; Morris, Samuel A.1; Liu, Fucai1,5; Chang, Lei1; Ichinose, Daichi6; Funakubo, Hiroshi6; Hu, Weijin7; Wu, Tom8; Liu, Zheng1; Dong, Shuai3; Wang, Junling1
Corresponding AuthorDong, Shuai(sdong@seu.edu.cn) ; Wang, Junling(jlwang@ntu.edu.sg)
2019-04-01
Source PublicationSCIENCE ADVANCES
ISSN2375-2548
Volume5Issue:4Pages:9
AbstractRecent research on piezoelectric materials is predominantly devoted to enhancing the piezoelectric coefficient, but overlooks its sign, largely because almost all of them exhibit positive longitudinal piezoelectricity. The only experimentally known exception is ferroelectric polymer poly(vinylidene fluoride) and its copolymers, which condense via weak van der Waals (vdW) interaction and show negative piezoelectricity. Here we report quantitative determination of giant intrinsic negative longitudinal piezoelectricity and electrostriction in another class of vdW solids-two-dimensional (2D) layered ferroelectric CuInP2S6. With the help of single crystal x-ray crystallography and density-functional theory calculations, we unravel the atomistic origin of negative piezoelectricity in this system, which arises from the large displacive instability of Cu ions coupled with its reduced lattice dimensionality. Furthermore, the sizable piezoelectric response and negligible substrate clamping effect of the 2D vdW piezoelectric materials warrant their great potential in nanoscale, flexible electromechanical devices.
Funding OrganizationMinistry of Education, Singapore ; National Natural Science Foundation of China
DOI10.1126/sciadv.aav3780
Indexed BySCI
Language英语
Funding ProjectMinistry of Education, Singapore[AcRF Tier 1 RG99/16] ; Ministry of Education, Singapore[AcRF Tier 1 RG118/17] ; National Natural Science Foundation of China[11834002]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000466398400050
PublisherAMER ASSOC ADVANCEMENT SCIENCE
Citation statistics
Cited Times:39[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/133510
Collection中国科学院金属研究所
Corresponding AuthorDong, Shuai; Wang, Junling
Affiliation1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
2.Soochow Univ, Sch Phys Sci & Technol, 1 Shizi St, Suzhou 215006, Peoples R China
3.Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China
4.Nanjing Univ Posts & Telecommun, Sch Sci, Nanjing 210023, Jiangsu, Peoples R China
5.Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu, Sichuan, Peoples R China
6.Tokyo Inst Technol, Sch Mat & Chem Technol, Dept Mat Sci & Engn, Yokohama, Kanagawa 2268502, Japan
7.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, IMR, Shenyang 110016, Liaoning, Peoples R China
8.Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
Recommended Citation
GB/T 7714
You, Lu,Zhang, Yang,Zhou, Shuang,et al. Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric[J]. SCIENCE ADVANCES,2019,5(4):9.
APA You, Lu.,Zhang, Yang.,Zhou, Shuang.,Chaturvedi, Apoorva.,Morris, Samuel A..,...&Wang, Junling.(2019).Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric.SCIENCE ADVANCES,5(4),9.
MLA You, Lu,et al."Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric".SCIENCE ADVANCES 5.4(2019):9.
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