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Layer-Stacking, Defects, and Robust Superconductivity on the Mo-Terminated Surface of Ultrathin Mo2C Flakes Grown by CVD
Zhang, Zongyuan1; Gedeon, Habakubaho1; Cheng, Zhengwang1; Xu, Chuan2; Shao, Zhibin1; Sun, Haigen1; Li, Shaojian1; Cao, Yan1; Zhang, Xin1; Bian, Qi1; Liu, Lijun1; Liu, Zhibo2; Cheng, Hui-Ming2,3,4; Ren, Wencai2,3; Pan, Minghu1
Corresponding AuthorRen, Wencai(wcren@imr.ac.cn) ; Pan, Minghu(minghupan@hust.edu.cn)
2019-05-01
Source PublicationNANO LETTERS
ISSN1530-6984
Volume19Issue:5Pages:3327-3335
AbstractMaterials can exhibit exotic properties when they approach the two-dimensional (2D) limit. Because of promising applications in catalysis and energy storage, 2D transition-metal carbides (TMCs) have attracted considerable attention in recent years. Among these TMCs, ultrathin crystalline alpha-Mo2C flakes have been fabricated by chemical vapor deposition on Cu/Mo bilayer foils, and their 2D superconducting property was revealed by transport measurements. Herein, we studied the ultrathin alpha-Mo2C flakes by atomic-resolved scanning tunneling microscopy/spectroscopy (STM/S). Strain-related structural modulation and the coexistence of different layer-stacking modes are observed on the Mo-terminated surface of alpha-Mo2C flakes as well as various lattice defects. Furthermore, an enhanced superconductivity with shorter correlation length was observed by STS technique, and such superconductivity is very robust despite the appearance of the defects. A mechanism of superconducting enhancement is proposed based on the strain-induced strong coupling and the increased disordering originated from lattice defects. Our results provide a comprehensive understanding of the correlations between atomic structure, defects, and enhanced superconductivity of this emerging 2D material.
KeywordUltrathin alpha-Mo2C flakes scanning tunneling microscopy/spectroscopy layer stacking structural defects superconductivity
Funding OrganizationNational Natural Science Foundation of China ; SYNL-T.S. K Research Fellowship ; Strategic Priority Research Program of Chinese Academy of Sciences
DOI10.1021/acs.nanolett.9b00972
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[11574095] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51802314] ; SYNL-T.S. K Research Fellowship ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000467781900072
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/133568
Collection中国科学院金属研究所
Corresponding AuthorRen, Wencai; Pan, Minghu
Affiliation1.Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Hubei, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
4.Tsinghua Univ, TBSI, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Zongyuan,Gedeon, Habakubaho,Cheng, Zhengwang,et al. Layer-Stacking, Defects, and Robust Superconductivity on the Mo-Terminated Surface of Ultrathin Mo2C Flakes Grown by CVD[J]. NANO LETTERS,2019,19(5):3327-3335.
APA Zhang, Zongyuan.,Gedeon, Habakubaho.,Cheng, Zhengwang.,Xu, Chuan.,Shao, Zhibin.,...&Pan, Minghu.(2019).Layer-Stacking, Defects, and Robust Superconductivity on the Mo-Terminated Surface of Ultrathin Mo2C Flakes Grown by CVD.NANO LETTERS,19(5),3327-3335.
MLA Zhang, Zongyuan,et al."Layer-Stacking, Defects, and Robust Superconductivity on the Mo-Terminated Surface of Ultrathin Mo2C Flakes Grown by CVD".NANO LETTERS 19.5(2019):3327-3335.
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