Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit

doi:10.1002/aelm.201800839

IMR OpenIR

	Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit
	Wang, Cheng 1,2; Chen, Long 3; Liu, Zhen 1,2; Liu, Zhibo 3; Ma, Xiu-Liang 3; Xu, Chuan 3; Cheng, Hui-Ming 3; Ren, Wencai 3; Kang, Ning 1,2
通讯作者	Ren, Wencai(wcren@imr.ac.cn) ; Kang, Ning(nkang@pku.edu.cn)
	2019-04-01
发表期刊	ADVANCED ELECTRONIC MATERIALS
ISSN	2199-160X
卷号	5 期号:4 页码:7
摘要	Recent theoretical calculations and spectroscopy measurements have shown that several materials with the tungsten carbide-type structure, such as molybdenum phosphide and tungsten carbide (WC), are a new type of topological semimetal hosting triply degenerate nodal points. So far, most of experimental studies are performed on large-size bulk crystal. 2D nano structures, with large surface-to-volume ratio, are expected to provide an attractive system for probing topological surface states and the development of device applications. Here the transport characterization of high-quality ultrathin WC single crystals is reported. The magnetoresistance (MR) shows a strong anisotropic behavior, which may be attributed to the transport anomalies of three-component fermions as theoretically proposed. The scaling analysis reveals the presence of the surface states in WC. The observation of the nonsaturating MR in strong magnetic fields, together with nonlinear and strong temperature dependent Hall effect, is consistent with the proposed multiple bands character of carriers in WC. In addition, a low-temperature upturn in the resistance is observed, indicating that electron electron interaction plays a prominent role in charge transport. The results demonstrate that the ultrathin WC crystals offer a potential platform for exploring exotic transport properties arising from the three-component fermions in the 2D limit.
关键词	2D materials 2D transition metal carbides cryogenic temperatures topological semimetal
资助者	National Natural Science Foundation of China ; National Key Research and Development Program of China ; Strategic Priority Research Program of Chinese Academy of Sciences
DOI	10.1002/aelm.201800839
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[11774005] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Key Research and Development Program of China[2016YFA0300601] ; National Key Research and Development Program of China[2017YFA0303304] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000468314900003
出版者	WILEY
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/133618
专题	中国科学院金属研究所
通讯作者	Ren, Wencai; Kang, Ning
作者单位	1.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China 2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Wang, Cheng,Chen, Long,Liu, Zhen,et al. Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(4):7.
APA	Wang, Cheng.,Chen, Long.,Liu, Zhen.,Liu, Zhibo.,Ma, Xiu-Liang.,...&Kang, Ning.(2019).Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit.ADVANCED ELECTRONIC MATERIALS,5(4),7.
MLA	Wang, Cheng,et al."Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit".ADVANCED ELECTRONIC MATERIALS 5.4(2019):7.