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Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit
Wang, Cheng1,2; Chen, Long3; Liu, Zhen1,2; Liu, Zhibo3; Ma, Xiu-Liang3; Xu, Chuan3; Cheng, Hui-Ming3; Ren, Wencai3; Kang, Ning1,2
Corresponding AuthorRen, Wencai(wcren@imr.ac.cn) ; Kang, Ning(nkang@pku.edu.cn)
2019-04-01
Source PublicationADVANCED ELECTRONIC MATERIALS
ISSN2199-160X
Volume5Issue:4Pages:7
AbstractRecent theoretical calculations and spectroscopy measurements have shown that several materials with the tungsten carbide-type structure, such as molybdenum phosphide and tungsten carbide (WC), are a new type of topological semimetal hosting triply degenerate nodal points. So far, most of experimental studies are performed on large-size bulk crystal. 2D nano structures, with large surface-to-volume ratio, are expected to provide an attractive system for probing topological surface states and the development of device applications. Here the transport characterization of high-quality ultrathin WC single crystals is reported. The magnetoresistance (MR) shows a strong anisotropic behavior, which may be attributed to the transport anomalies of three-component fermions as theoretically proposed. The scaling analysis reveals the presence of the surface states in WC. The observation of the nonsaturating MR in strong magnetic fields, together with nonlinear and strong temperature dependent Hall effect, is consistent with the proposed multiple bands character of carriers in WC. In addition, a low-temperature upturn in the resistance is observed, indicating that electron electron interaction plays a prominent role in charge transport. The results demonstrate that the ultrathin WC crystals offer a potential platform for exploring exotic transport properties arising from the three-component fermions in the 2D limit.
Keyword2D materials 2D transition metal carbides cryogenic temperatures topological semimetal
Funding OrganizationNational Natural Science Foundation of China ; National Key Research and Development Program of China ; Strategic Priority Research Program of Chinese Academy of Sciences
DOI10.1002/aelm.201800839
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[11774005] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Key Research and Development Program of China[2016YFA0300601] ; National Key Research and Development Program of China[2017YFA0303304] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000]
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000468314900003
PublisherWILEY
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/133618
Collection中国科学院金属研究所
Corresponding AuthorRen, Wencai; Kang, Ning
Affiliation1.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Wang, Cheng,Chen, Long,Liu, Zhen,et al. Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(4):7.
APA Wang, Cheng.,Chen, Long.,Liu, Zhen.,Liu, Zhibo.,Ma, Xiu-Liang.,...&Kang, Ning.(2019).Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit.ADVANCED ELECTRONIC MATERIALS,5(4),7.
MLA Wang, Cheng,et al."Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit".ADVANCED ELECTRONIC MATERIALS 5.4(2019):7.
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