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A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices
Zhang, Dingdong1,2; Du, Jinhong1,2; Hong, Yi-Lun1,2; Zhang, Weimin1,2; Wang, Xiao3; Jin, Hui3; Burn, Paul L.3; Yu, Junsheng4; Chen, Maolin1,2; Sun, Dong-Min1,2; Li, Meng; Liu, Lianqing5; Ma, Lai-Peng1,2; Cheng, Hui-Ming1,2,6; Ren, Wencai1,2
Corresponding AuthorRen, Wencai(wcren@imr.ac.cn)
2019-05-01
Source PublicationACS NANO
ISSN1936-0851
Volume13Issue:5Pages:5513-5522
AbstractClean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials glown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe, and WS2 single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe2 retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling highperformance field effect transistors with mobility and ON/OFF ratio,--10 times higher than those made by PMMAtransferred WSe2. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of,-6.4% achieved.
Keywordrosin graphene 2D materials clean transfer optoelectronic devices
Funding OrganizationMinistry of Science and Technology of China ; National Science Foundation of China ; Chinese Academy of Sciences ; Postdoctoral Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Australian Research Council ; Australian Government through the Australian Renewable Energy Agency (ARENA) Australian Centre for Advanced Photovoltaics
DOI10.1021/acsnano.9b00330
Indexed BySCI
Language英语
Funding ProjectMinistry of Science and Technology of China[2016YFA0200101] ; National Science Foundation of China[51572265] ; National Science Foundation of China[51861135201] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51521091] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Postdoctoral Science Foundation of China[2018M630309] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Australian Research Council[FL160100067] ; Australian Government through the Australian Renewable Energy Agency (ARENA) Australian Centre for Advanced Photovoltaics
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000469886300057
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/133853
Collection中国科学院金属研究所
Corresponding AuthorRen, Wencai
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
3.Univ Queensland, Sch Chem & Mol Biosci, Ctr Organ Photon & Elect, Brisbane, Qld 4072, Australia
4.UESTC, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
5.Chinese Acad Sci, Shenyang Inst Automat, 114 Nanta St, Shenyang 110016, Liaoning, Peoples R China
6.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Dingdong,Du, Jinhong,Hong, Yi-Lun,et al. A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices[J]. ACS NANO,2019,13(5):5513-5522.
APA Zhang, Dingdong.,Du, Jinhong.,Hong, Yi-Lun.,Zhang, Weimin.,Wang, Xiao.,...&Ren, Wencai.(2019).A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices.ACS NANO,13(5),5513-5522.
MLA Zhang, Dingdong,et al."A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices".ACS NANO 13.5(2019):5513-5522.
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