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Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films
Gu, Youdi1,2; Wei, Yi-Wen3; Xu, Kun4,5; Zhang, Hongrui6; Wan, Fei1,7; Li, Fan2; Saleem, Muhammad Shahrukh2; Chang, Cui-Zu7; Sun, Jirong6; Song, Cheng2; Feng, Ji3,8,9; Zhong, Xiaoyan4; Liu, Wei1; Zhang, Zhidong1; Zhu, Jing4; Pan, Feng2
Corresponding AuthorSong, Cheng(songcheng@mail.tsingbua.edu.cn) ; Feng, Ji(jfeng11@pku.edu.cn) ; Zhong, Xiaoyan(xyzhong@mail.tsinghua.edu.cn)
2019-10-02
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume52Issue:40Pages:13
AbstractTopological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing the Dzyaloshinskii-Moriya (DM) interaction and corresponding non-trivial spin-textures. In this paper, the THE and its electrical control are observed in ultrathin (<= 8 unit cells. u.c.) 4D ferromagnetic SrRuO3 films grown on SrTiO3(001) substrates, indicating the existence of gate-bias-tunable DM interaction in the single SrRuO3 layer without contacting 5D oxide SrIrO3 layer. High-resolution lattice structure analysis revealed that the interfacial RuO6 octahedral tilting induced by local orthorhombic-to-tetragonal structural phase transition exists across the SrRuO3/SrTiO3 interface, which naturally breaks the inversion symmetry. Our theoretical calculations demonstrate that the DM interaction arises owing to the broken inversion symmetry and strong spin-orbit interaction of 4D SrRuO3. This interfacial RuO6 octahedral tilting-induced DM interaction can stabilize the Neel-type magnetic skyrmions, which in turn accounts for the observed THE in transport. Besides the fundamental significance, the understanding of THE in oxides and its electrical manipulation presented in this work could advance the low power cost topological electronic and spintronic applications.
Keywordoxygen octahedral tilting topological Hall effect SrRuO3 films gate-tunnable Dzyaloshinskii-Moriya interaction oxide spintronics
Funding OrganizationBeijing Innovation Center for Future Chip (ICFC) ; Young Chang Jiang Scholars Program ; National Key R&D Program of China ; National Natural Science Foundation of China ; National 973 Project of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Alfred P Sloan Research Fellowship ; ARO Young Investigator Program Award
DOI10.1088/1361-6463/ab2fe8
Indexed BySCI
Language英语
Funding ProjectBeijing Innovation Center for Future Chip (ICFC) ; Young Chang Jiang Scholars Program ; National Key R&D Program of China[2017YFA0206302] ; National Natural Science Foundation of China[51671110] ; National Natural Science Foundation of China[51571128] ; National Natural Science Foundation of China[51390471] ; National Natural Science Foundation of China[51761135131] ; National Natural Science Foundation of China[51822105] ; National Natural Science Foundation of China[11725415] ; National Natural Science Foundation of China[11804118] ; National 973 Project of China[2015CB654902] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB28000000] ; Alfred P Sloan Research Fellowship ; ARO Young Investigator Program Award[W911NF1810198]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000477646100001
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:24[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/134733
Collection中国科学院金属研究所
Corresponding AuthorSong, Cheng; Feng, Ji; Zhong, Xiaoyan
Affiliation1.Univ Chinese Acad Sci, Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
3.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China
4.Tsinghua Univ, Sch Mat Sci & Engn, Natl Ctr Electron Microscopy Beijing, Key Lab Adv Mat MOE,State Key Lab New Ceram & Fin, Beijing 100084, Peoples R China
5.Tsinghua Univ, Cent Nano & Micro Mech, Beijing 100084, Peoples R China
6.Univ Chinese Acad Sci, Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
7.Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
8.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
9.Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Gu, Youdi,Wei, Yi-Wen,Xu, Kun,et al. Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2019,52(40):13.
APA Gu, Youdi.,Wei, Yi-Wen.,Xu, Kun.,Zhang, Hongrui.,Wan, Fei.,...&Pan, Feng.(2019).Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,52(40),13.
MLA Gu, Youdi,et al."Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 52.40(2019):13.
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