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Defective graphene as a high-efficiency Raman enhancement substrate
Zhao, Tong1,2; Liu, Zhibo1; Xin, Xing1,3; Cheng, Hui-Ming1,2,4; Ren, Wencai1,2
Corresponding AuthorRen, Wencai(wcren@imr.ac.cn)
2019-09-01
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume35Issue:9Pages:1996-2002
AbstractPristine graphene (PG) has been demonstrated to be an excellent substrate for Raman enhancement, which is called graphene-enhanced Raman scattering. However, the chemically inert and hydrophobic surface of PG hinders the adsorption of molecules especially in aqueous solutions, and consequently limits the Raman enhanced efficiency. Here, we synthesized defective graphene (DG) films by chemical vapor deposition on Au. which has a defect density of similar to 2.0 x 10(11) cm(-2). The DG shows a much better wettability than PG towards dye solution. Combining with the strong adsorption ability of defects to molecules, DG shows greatly enhanced efficiency than PG with perfect lattice. For example, the detection limit for rhodamine B can reach 2 x 10(-9) M for DG while it is on the order of 10(-7) M for PG. In addition, DG has high enhancement uniformity and the Au substrate can be reused after electrochemical bubbling transfer. These advantages suggest the great potential of the DG grown on Au for practical applications in environmental monitoring. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
KeywordDefective graphene Raman enhancement Chemical vapor deposition Bubbling transfer
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Strategic Priority Research Program of Chinese Academy of Sciences
DOI10.1016/j.jmst.2019.05.012
Indexed BySCI
Language英语
Funding ProjectNational Key R&D Program of China[2016YFA0200101] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51861135201] ; Chinese Academy of Sciences[1743211] ; Chinese Academy of Sciences[YSB20160011] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000475870600023
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/134817
Collection中国科学院金属研究所
Corresponding AuthorRen, Wencai
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
3.Univ Chinese Acad Sci, Shenyang 110016, Liaoning, Peoples R China
4.Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Zhao, Tong,Liu, Zhibo,Xin, Xing,et al. Defective graphene as a high-efficiency Raman enhancement substrate[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2019,35(9):1996-2002.
APA Zhao, Tong,Liu, Zhibo,Xin, Xing,Cheng, Hui-Ming,&Ren, Wencai.(2019).Defective graphene as a high-efficiency Raman enhancement substrate.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,35(9),1996-2002.
MLA Zhao, Tong,et al."Defective graphene as a high-efficiency Raman enhancement substrate".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 35.9(2019):1996-2002.
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