| Resistive Switching Behavior in Ferroelectric Heterostructures | |
| Wang, Zhan Jie1,2; Bai, Yu1,2 | |
| Corresponding Author | Wang, Zhan Jie(wangzj@imr.ac.cn) |
| 2019-08-01 | |
| Source Publication | SMALL
 |
| ISSN | 1613-6810 |
| Volume | 15Issue:32Pages:13 |
| Abstract | Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile random-access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization-dominated and defect-dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted. |
| Keyword | conductivity ferroelectric heterostructures ferroelectricity resistive switching |
| Funding Organization | basic research and common key technology innovation projects of Shenyang National Laboratory for Materials Science ; key research and development plan of Liaoning Province ; basic scientific research projects of colleges and universities of Liaoning Province ; major project of industrial technology research institute of Liaoning colleges and universities |
| DOI | 10.1002/smll.201805088 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | basic research and common key technology innovation projects of Shenyang National Laboratory for Materials Science[2017RP15] ; key research and development plan of Liaoning Province[2017104002] ; basic scientific research projects of colleges and universities of Liaoning Province[LZGD2017005] ; major project of industrial technology research institute of Liaoning colleges and universities[201824010] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000480331100005 |
| Publisher | WILEY-V C H VERLAG GMBH |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/134896 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, Zhan Jie |
| Affiliation | 1.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Zhan Jie,Bai, Yu. Resistive Switching Behavior in Ferroelectric Heterostructures[J]. SMALL,2019,15(32):13. |
| APA | Wang, Zhan Jie,&Bai, Yu.(2019).Resistive Switching Behavior in Ferroelectric Heterostructures.SMALL,15(32),13. |
| MLA | Wang, Zhan Jie,et al."Resistive Switching Behavior in Ferroelectric Heterostructures".SMALL 15.32(2019):13. |
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