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Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors
Li, Xiaohan1,2; Huang, Biaohong1,2; Hu, Weijin1,2; Zhang, Zhidong1,2
Corresponding AuthorHu, Weijin(wjhu@imr.ac.cn)
2019-10-01
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume35Issue:10Pages:2194-2199
AbstractModulating the ferroelectric properties of P(VDF-TrFE) polymers both electrically and optically could open up new opportunities for their applications in non-volatile memories and sensors. Here by using the Nb:SrTiO3 semiconductor as electrode compared with metal Au electrode, we report on the modulation of ferroelectric properties of P(VDF-TrFE) thin film capacitors both by electric field and UV light. A ferroelectric hysteresis loop shift together with the asymmetric switching behavior has been observed when using semiconducting electrode, which could be explained by the band alignment model based on interfacial charge screening. On the basis of band bending near the ferroelectric/semiconductor interface, we could further modulate the ferroelectric switching behaviors reversibly by UV light illumination. Our research provides a new route to engineer the ferroelectric properties of P(VDF-TrFE) polymer thin film capacitors, promising their applications in optoelectronic devices. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
KeywordP(VDF-TrFE) Ferroelectric Semiconducting electrode Coercive field Switching dynamics UV-light
Funding OrganizationHundred Talents Program of Chinese Academy of Sciences (CAS)
DOI10.1016/j.jmst.2019.05.040
Indexed BySCI
Language英语
Funding ProjectHundred Talents Program of Chinese Academy of Sciences (CAS)
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000484531600009
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/135236
Collection中国科学院金属研究所
Corresponding AuthorHu, Weijin
Affiliation1.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.USTC, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
Recommended Citation
GB/T 7714
Li, Xiaohan,Huang, Biaohong,Hu, Weijin,et al. Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2019,35(10):2194-2199.
APA Li, Xiaohan,Huang, Biaohong,Hu, Weijin,&Zhang, Zhidong.(2019).Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,35(10),2194-2199.
MLA Li, Xiaohan,et al."Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 35.10(2019):2194-2199.
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