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Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties
Cai, Zhengyang1; Shen, Tianze2; Zhu, Qi3,4; Feng, Simin1; Yu, Qiangmin1; Liu, Jiaman1; Tang, Lei1; Zhao, Yue2; Wang, Jiangwei3,4; Liu, Bilu1; Cheng, Hui-Ming1,5
Corresponding AuthorLiu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
2019-10-02
Source PublicationSMALL
ISSN1613-6810
Pages9
AbstractDoping of bulk silicon and III-V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS2 is reported to tune its electronic and catalytic properties. The key for the successful incorporation of Mn into the MoS2 lattice stems from the development of a new growth technology called dual-additive chemical vapor deposition. First, the addition of a MnO2 additive to the MoS2 growth process reshapes the morphology and increases lateral size of Mn-doped MoS2. Second, a NaCl additive helps in promoting the substitutional doping and increases the concentration of Mn dopant to 1.7 at%. Because Mn has more valance electrons than Mo, its doping into MoS2 shifts the Fermi level toward the conduction band, resulting in improved electrical contact in field effect transistors. Mn doping also increases the hydrogen evolution activity of MoS2 electrocatalysts. This work provides a growth method for doping nonlike elements into 2D MoS2 and potentially many other 2D materials to modify their properties.
Keyworddoping dual-additive chemical vapor deposition electronic properties field effect transistors hydrogen evolution reaction MoS2
Funding OrganizationNational Natural Science Foundation of China ; Youth 1000-Talent Program of China ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project ; Shenzhen Basic Research Project ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline
DOI10.1002/smll.201903181
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51920105002] ; Youth 1000-Talent Program of China ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Guangdong Innovative and Entrepreneurial Research Team Program[2016ZT06D348] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523] ; Shenzhen Basic Research Project[JCYJ20170307140956657] ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000488405900001
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:17[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/135793
Collection中国科学院金属研究所
Corresponding AuthorLiu, Bilu; Cheng, Hui-Ming
Affiliation1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Guangdong, Peoples R China
2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
3.Zhejiang Univ, Sch Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China
4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Cai, Zhengyang,Shen, Tianze,Zhu, Qi,et al. Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties[J]. SMALL,2019:9.
APA Cai, Zhengyang.,Shen, Tianze.,Zhu, Qi.,Feng, Simin.,Yu, Qiangmin.,...&Cheng, Hui-Ming.(2019).Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties.SMALL,9.
MLA Cai, Zhengyang,et al."Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties".SMALL (2019):9.
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