Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer

doi:10.1021/acsami.9b15457

IMR OpenIR

	Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer
	Yan, Shili 1,9; Huang, Hai 2; Xie, Zhijian 1; Ye, Guojun 3,4; Li, Xiao-Xi 5,6; Taniguchi, Takashi 7; Watanabe, Kenji 7; Han, Zheng 5,6; Chen, Xianhui 3,4; Wang, Jianlu 2; Chen, Jian-Hao 1,8,9
通讯作者	Chen, Xianhui(chenxh@ustc.edu.cn) ; Wang, Jianlu(jlwang@mail.sitp.ac.cn) ; Chen, Jian-Hao(chenjianhao@pku.edu.cn)
	2019-11-13
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	11 期号:45 页码:42358-42364
摘要	Two-dimensional material-based ferroelectric field-effect transistors (2D-FeFETs) hold great promise in information storage and processing. However, an often-observed and hard-to-control anti-hysteresis response of 2D-FeFETs, for example, hysteretic switching of the resistance states of the devices opposite to that of the actual polarization of the ferroelectric dielectric, represents a major issue in the industrial applications of such devices. Here, we demonstrate a van der Waals buffer technique that eliminates anti-hysteresis in black phosphorus (BP) 2D-FeFETs and restores their intrinsic hysteretic behavior. Our modified BP 2D-FeFETs showed outstanding performance including high room-temperature carrier mobility, robust bistable states with fast response to a gate, a large on/off ratio at zero gate voltage, a large and considerably more stable memory window, and a long retention time. During repeated gate operation, the memory window of the buffered device is similar to 7000 times more stable than the unbuffered device. Such a method could be crucial in future information technological applications that utilize the intrinsic properties of 2D-FeFETs.
关键词	black phosphorus P(VDF-TrFE) nonvolatile ferroelectric memories field-effect transistors (FETs) anti-hysteresis
资助者	National Basic Research Program of China (973 grant) ; National Natural Science Foundation of China (NSFC) ; NSFC ; Key Research Program of Frontier Sciences, CAS ; Key Research Project of Frontier Sciences of CAS ; Elemental Strategy Initiative ; JSPS
DOI	10.1021/acsami.9b15457
收录类别	SCI
语种	英语
资助项目	National Basic Research Program of China (973 grant)[2016YFA0203900] ; National Basic Research Program of China (973 grant)[2018YFA0305604] ; National Natural Science Foundation of China (NSFC)[11934001] ; National Natural Science Foundation of China (NSFC)[11774010] ; National Natural Science Foundation of China (NSFC)[11504385] ; NSFC[11534010] ; Key Research Program of Frontier Sciences, CAS[QYZDY-SSW-SLH021] ; Key Research Project of Frontier Sciences of CAS[QYZDB-SSW-JSC016] ; Elemental Strategy Initiative ; JSPS
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000497263600056
出版者	AMER CHEMICAL SOC
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/136157
专题	中国科学院金属研究所
通讯作者	Chen, Xianhui; Wang, Jianlu; Chen, Jian-Hao
作者单位	1.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China 4.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China 5.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 6.Chinese Acad Sci, Shenyang Natl Lab Mat, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 7.Natl Inst Mat Sci, I-1 Namiki, Tsukuba, Ibaraki 3050044, Japan 8.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China 9.Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
推荐引用方式 GB/T 7714	Yan, Shili,Huang, Hai,Xie, Zhijian,et al. Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(45):42358-42364.
APA	Yan, Shili.,Huang, Hai.,Xie, Zhijian.,Ye, Guojun.,Li, Xiao-Xi.,...&Chen, Jian-Hao.(2019).Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer.ACS APPLIED MATERIALS & INTERFACES,11(45),42358-42364.
MLA	Yan, Shili,et al."Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer".ACS APPLIED MATERIALS & INTERFACES 11.45(2019):42358-42364.