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Transfer-free CVD graphene for highly sensitive glucose sensors
Wei, Shijing1,2,3,4; Hao, Yabin1,5; Ying, Zhe1; Xu, Chuan1; Wei, Qinwei1,5; Xue, Sen1,6; Cheng, Hui-Ming1,2,5,7; Ren, Wencai1,5; Ma, Lai-Peng1,5; Zeng, You1,5
Corresponding AuthorMa, Lai-Peng(lpma@imr.ac.cn) ; Zeng, You(yzeng@imr.ac.cn)
2020-01-15
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume37Pages:71-76
AbstractChemical vapor deposition (CVD) graphene film is a promising electrode-modifying material for fabricating high-performance glucose sensor due to its high electrical conductivity and two-dimensional structure over large area. However, the use of typical metal-based CVD graphene suffers from the residue contamination of polymer transfer-support and heavy metal ions. In this work, we directly grew few-layer graphene on the SiO2/Si substrate without transfer process and then fabricated graphene-based glucose sensors by sequentially immobilizing glucose oxidase and depositing Nafion layer on its surface that was functionalized by oxygen-plasma treatment. Our transfer- and metal-free process shows distinct advantage over the common metal-CVD method in improving the electrochemical performance by eliminating the contamination of transfer-residue. Thus-obtained glucose sensor shows a high sensitivity (16.16 mu A mM(-1) cm(-2)) with a detection limit of 124.19 mu M. This method is simple and promising for the development of highly sensitive glucose sensors. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
KeywordGraphene Chemical vapor deposition Transfer-free Oxygen-plasma treatment Glucose sensor
Funding OrganizationMinistry of Science and Technology of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Strategic Priority Research Program of Chinese Academy of Sciences ; Liaoning Revitalization Talents Program ; Liaoning Key RD Program ; Program for Guangdong Introducing Innovative and Enterpreneurial Teams ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline
DOI10.1016/j.jmst.2019.07.039
Indexed BySCI
Language英语
Funding ProjectMinistry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001104] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[51802317] ; National Natural Science Foundation of China[61574143] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Chinese Academy of Sciences[KGZD-EW-T06] ; Chinese Academy of Sciences[XDPB06] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Liaoning Revitalization Talents Program[XLYC1808013] ; Liaoning Key RD Program ; Program for Guangdong Introducing Innovative and Enterpreneurial Teams ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000503163100009
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/136363
Collection中国科学院金属研究所
Corresponding AuthorMa, Lai-Peng; Zeng, You
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
6.Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China
7.Tsinghua Univ, Shenzhen Geim Graphene Ctr, TBSI, Shenzhen 518055, Guangdong, Peoples R China
Recommended Citation
GB/T 7714
Wei, Shijing,Hao, Yabin,Ying, Zhe,et al. Transfer-free CVD graphene for highly sensitive glucose sensors[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,37:71-76.
APA Wei, Shijing.,Hao, Yabin.,Ying, Zhe.,Xu, Chuan.,Wei, Qinwei.,...&Zeng, You.(2020).Transfer-free CVD graphene for highly sensitive glucose sensors.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,37,71-76.
MLA Wei, Shijing,et al."Transfer-free CVD graphene for highly sensitive glucose sensors".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 37(2020):71-76.
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