Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film

doi:10.1002/pssb.201900139

IMR OpenIR

	Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film
	Wei, Feng 1,3,4,6; Gao, Xuan P. A.2,5; Ma, Song 1,4; Zhang, Zhidong 1,4
通讯作者	Gao, Xuan P. A.(xuan.gao@case.edu) ; Ma, Song(songma@imr.ac.cn)
	2019-10-01
发表期刊	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
ISSN	0370-1972
卷号	256 期号:10 页码:6
摘要	Carrier density control is of great importance to modulate the topological phase and topological transport for the topological crystalline insulators (TCIs). Here, the transport property modulation of TCI SnTe thin films grown on SrTiO3 (111) by tuning the carrier density is reported. The low temperature magneto-transport in a typical SnTe film with high hole carrier density in the as grown films exhibits a giant linear magnetoresistance (GLMR) effect (up to 1849% at 2K under 14T) and then the magnetoresistance becomes much weaker and weak anti-localization (WAL) appears in the same SnTe film by n-type doping in vacuum after aging 30 days. Alternatively, the hole carrier density of the as grown SnTe films is lowered by enhancing the growth temperature to promote Sn diffusion to reduce Sn vacancies and the as grown samples exhibit a WAL with two-dimensional (2D) characteristics. This work provides promising application for magnetoelectronic sensors and spintronics based on TCI SnTe thin film.
关键词	carrier density giant linear magnetoresistance SnTe topological crystalline insulators weak antilocalization
资助者	Natural Science Foundation of China (NSFC) ; National Key R&D Program of China ; NSF
DOI	10.1002/pssb.201900139
收录类别	SCI
语种	英语
资助项目	Natural Science Foundation of China (NSFC)[51571195] ; Natural Science Foundation of China (NSFC)[51331006] ; Natural Science Foundation of China (NSFC)[51590883] ; National Key R&D Program of China[2017YFA0206301] ; NSF[DMR-1607631]
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000495371400027
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/136883
专题	中国科学院金属研究所
通讯作者	Gao, Xuan P. A.; Ma, Song
作者单位	1.Shenyang Natl Lab Mat Sci, Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Case Western Reserve Univ, Dept Phys, Adelbert, OH 2076 USA 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 5.Case Western Reserve Univ, Dept Phys, 2076 Adelbert Rd, Cleveland, OH 44106 USA 6.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Wei, Feng,Gao, Xuan P. A.,Ma, Song,et al. Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2019,256(10):6.
APA	Wei, Feng,Gao, Xuan P. A.,Ma, Song,&Zhang, Zhidong.(2019).Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,256(10),6.
MLA	Wei, Feng,et al."Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 256.10(2019):6.