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Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film
Wei, Feng1,3,4,6; Gao, Xuan P. A.2,5; Ma, Song1,4; Zhang, Zhidong1,4
Corresponding AuthorGao, Xuan P. A.(xuan.gao@case.edu) ; Ma, Song(songma@imr.ac.cn)
2019-10-01
Source PublicationPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
ISSN0370-1972
Volume256Issue:10Pages:6
AbstractCarrier density control is of great importance to modulate the topological phase and topological transport for the topological crystalline insulators (TCIs). Here, the transport property modulation of TCI SnTe thin films grown on SrTiO3 (111) by tuning the carrier density is reported. The low temperature magneto-transport in a typical SnTe film with high hole carrier density in the as grown films exhibits a giant linear magnetoresistance (GLMR) effect (up to 1849% at 2K under 14T) and then the magnetoresistance becomes much weaker and weak anti-localization (WAL) appears in the same SnTe film by n-type doping in vacuum after aging 30 days. Alternatively, the hole carrier density of the as grown SnTe films is lowered by enhancing the growth temperature to promote Sn diffusion to reduce Sn vacancies and the as grown samples exhibit a WAL with two-dimensional (2D) characteristics. This work provides promising application for magnetoelectronic sensors and spintronics based on TCI SnTe thin film.
Keywordcarrier density giant linear magnetoresistance SnTe topological crystalline insulators weak antilocalization
Funding OrganizationNatural Science Foundation of China (NSFC) ; National Key R&D Program of China ; NSF
DOI10.1002/pssb.201900139
Indexed BySCI
Language英语
Funding ProjectNatural Science Foundation of China (NSFC)[51571195] ; Natural Science Foundation of China (NSFC)[51331006] ; Natural Science Foundation of China (NSFC)[51590883] ; National Key R&D Program of China[2017YFA0206301] ; NSF[DMR-1607631]
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000495371400027
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/136883
Collection中国科学院金属研究所
Corresponding AuthorGao, Xuan P. A.; Ma, Song
Affiliation1.Shenyang Natl Lab Mat Sci, Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Case Western Reserve Univ, Dept Phys, Adelbert, OH 2076 USA
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
5.Case Western Reserve Univ, Dept Phys, 2076 Adelbert Rd, Cleveland, OH 44106 USA
6.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Wei, Feng,Gao, Xuan P. A.,Ma, Song,et al. Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2019,256(10):6.
APA Wei, Feng,Gao, Xuan P. A.,Ma, Song,&Zhang, Zhidong.(2019).Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,256(10),6.
MLA Wei, Feng,et al."Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 256.10(2019):6.
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