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Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering
Song Guihong1; Li Guipeng1; Liu Qiannan1; Du Hao2; Hu Fang1
Corresponding AuthorSong Guihong(songgh@sut.edu.cn) ; Du Hao(hdu@imr.ac.cn)
2019-11-11
Source PublicationACTA METALLURGICA SINICA
ISSN0412-1961
Volume55Issue:11Pages:1469-1476
AbstractThe Mg content in Mg-2(Sn, Si) films obtained by PVD method often deviates its stoichiometric composition due to the easy evaporation of Mg in low pressure. In order to control the Mg content in Mg-2(Sn, Si) lattice and achieve enhancements in thermoelectric efficiency, The Mg-Sn-Si-Bi thin films were deposited on single Si(111) substrate using a Mg-Sn-Si-Bi alloy target and a high pure Mg target by magnetron sputtering alternately. The results show that the Mg content greatly increases, while contents of both Sn and Si decrease in the films with the increasing sputtering time of the Mg target. The thin films possess single cubic Mg-2(Sn, Si) solution phase as the Mg content (atomic fraction) is in the range from 71.437% to 64.497%, the Mg-2(Sn, Si) solution phase disappear and both of Mg2Sn and Mg2Si phases occur as the Mg content decreases below 59.813% in the films. Furthermore, the Mg2Sn phase decomposes and metal Sn occurs as the Mg content in the films decreases to 54.006%. The metal Sn content increases and the Mg2Sn phase content decreases with the decreasing Mg content in the films, accompanying the near invariable Mg2Sn phase content. XPS spectrum data show that Mg exhibits the tendency to lose electrons. However, the Sn, Si and Bi exhibit the tendency to obtain electrons in deposited films. It is indicated that the Mg-Sn-Si-Bi thin film with single cubic solution phase possesses higher conductivity due to its higher carrier concentration and higher mobility. The mobility greatly decreases due to the occurrence of metal Sn in the films, thus the conductivity of the films greatly decreases.
KeywordMg-2(Sn, Si) film Mg content conductivity mobility XPS
Funding OrganizationNational Natural Science Foundation of China
DOI10.11900/0412.1961.2019.00115
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51772193]
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000492725000012
PublisherSCIENCE PRESS
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/136968
Collection中国科学院金属研究所
Corresponding AuthorSong Guihong; Du Hao
Affiliation1.Shenyang Univ Technol, Sch Mat Sci & Technol, Shenyang 110870, Liaoning, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Song Guihong,Li Guipeng,Liu Qiannan,et al. Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering[J]. ACTA METALLURGICA SINICA,2019,55(11):1469-1476.
APA Song Guihong,Li Guipeng,Liu Qiannan,Du Hao,&Hu Fang.(2019).Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering.ACTA METALLURGICA SINICA,55(11),1469-1476.
MLA Song Guihong,et al."Microstructure and Electric Conductance of Mg-2(Sn, Si) Thin Films by Sputtering".ACTA METALLURGICA SINICA 55.11(2019):1469-1476.
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