| Topological phonons in graphene | |
| Li, Jiangxu1,2; Wang, Lei1,2; Liu, Jiaxi1,2; Li, Ronghan1; Zhang, Zhenyu3,4; Chen, Xing-Qiu1 | |
| Corresponding Author | Chen, Xing-Qiu(xingqiu.chen@imr.ac.cn) |
| 2020-02-12 | |
| Source Publication | PHYSICAL REVIEW B
 |
| ISSN | 2469-9950 |
| Volume | 101Issue:8Pages:7 |
| Abstract | By means of first-principles calculations and a modeling analysis, we have predicted that traditional two-dimensional graphene hosts four types of topological phononic Dirac points (DPs) and a phononic nodal ring (PNR) in its phonon spectrum. In the phonon spectrum of graphene, there exist four types of DPs, DP1, DP2, DP3, and DP4, with both DP1 and DP2 located at the Brillouin zone (BZ) corners K and K', DP3 located along the Gamma-K line, and DP4 located along the Gamma-M line, as well as the PNR surrounding the centered Gamma point in the q(x,y) plane. The calculations further reveal that Berry curvatures are vanishingly zero throughout the whole BZ, except for the positions of these four Dirac phonons, at which the nonzero singular Berry curvatures appear with a Berry phase of pi or -pi, confirming its topological nontrivial nature. The topologically protected nontrivial phononic edge states have been also evidenced along both the zigzag-edged and armchair-edged boundaries. These results may pave the way for further studies of the topological phononic properties of graphene, such as phononic destructive interference with a suppression of backscattering and intrinsic phononic quantum Hall-like effects. |
| Funding Organization | National Science Fund for Distinguished Young Scholars ; National Natural Science Foundation of China |
| DOI | 10.1103/PhysRevB.101.081403 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Science Fund for Distinguished Young Scholars[51725103] ; National Natural Science Foundation of China[51671193] |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000513212100002 |
| Publisher | AMER PHYSICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/137217 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Chen, Xing-Qiu |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 3.Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat ICQD, Hefei Natl Lab Phys Sci Microscale, Hefei 110016, Peoples R China 4.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Li, Jiangxu,Wang, Lei,Liu, Jiaxi,et al. Topological phonons in graphene[J]. PHYSICAL REVIEW B,2020,101(8):7. |
| APA | Li, Jiangxu,Wang, Lei,Liu, Jiaxi,Li, Ronghan,Zhang, Zhenyu,&Chen, Xing-Qiu.(2020).Topological phonons in graphene.PHYSICAL REVIEW B,101(8),7. |
| MLA | Li, Jiangxu,et al."Topological phonons in graphene".PHYSICAL REVIEW B 101.8(2020):7. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment