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Topological phonons in graphene
Li, Jiangxu1,2; Wang, Lei1,2; Liu, Jiaxi1,2; Li, Ronghan1; Zhang, Zhenyu3,4; Chen, Xing-Qiu1
Corresponding AuthorChen, Xing-Qiu(xingqiu.chen@imr.ac.cn)
2020-02-12
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
Volume101Issue:8Pages:7
AbstractBy means of first-principles calculations and a modeling analysis, we have predicted that traditional two-dimensional graphene hosts four types of topological phononic Dirac points (DPs) and a phononic nodal ring (PNR) in its phonon spectrum. In the phonon spectrum of graphene, there exist four types of DPs, DP1, DP2, DP3, and DP4, with both DP1 and DP2 located at the Brillouin zone (BZ) corners K and K', DP3 located along the Gamma-K line, and DP4 located along the Gamma-M line, as well as the PNR surrounding the centered Gamma point in the q(x,y) plane. The calculations further reveal that Berry curvatures are vanishingly zero throughout the whole BZ, except for the positions of these four Dirac phonons, at which the nonzero singular Berry curvatures appear with a Berry phase of pi or -pi, confirming its topological nontrivial nature. The topologically protected nontrivial phononic edge states have been also evidenced along both the zigzag-edged and armchair-edged boundaries. These results may pave the way for further studies of the topological phononic properties of graphene, such as phononic destructive interference with a suppression of backscattering and intrinsic phononic quantum Hall-like effects.
Funding OrganizationNational Science Fund for Distinguished Young Scholars ; National Natural Science Foundation of China
DOI10.1103/PhysRevB.101.081403
Indexed BySCI
Language英语
Funding ProjectNational Science Fund for Distinguished Young Scholars[51725103] ; National Natural Science Foundation of China[51671193]
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000513212100002
PublisherAMER PHYSICAL SOC
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/137217
Collection中国科学院金属研究所
Corresponding AuthorChen, Xing-Qiu
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
3.Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat ICQD, Hefei Natl Lab Phys Sci Microscale, Hefei 110016, Peoples R China
4.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 110016, Peoples R China
Recommended Citation
GB/T 7714
Li, Jiangxu,Wang, Lei,Liu, Jiaxi,et al. Topological phonons in graphene[J]. PHYSICAL REVIEW B,2020,101(8):7.
APA Li, Jiangxu,Wang, Lei,Liu, Jiaxi,Li, Ronghan,Zhang, Zhenyu,&Chen, Xing-Qiu.(2020).Topological phonons in graphene.PHYSICAL REVIEW B,101(8),7.
MLA Li, Jiangxu,et al."Topological phonons in graphene".PHYSICAL REVIEW B 101.8(2020):7.
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