Topological phonons in graphene

doi:10.1103/PhysRevB.101.081403

IMR OpenIR

	Topological phonons in graphene
	Li, Jiangxu 1,2; Wang, Lei 1,2; Liu, Jiaxi 1,2; Li, Ronghan 1; Zhang, Zhenyu 3,4; Chen, Xing-Qiu 1
通讯作者	Chen, Xing-Qiu(xingqiu.chen@imr.ac.cn)
	2020-02-12
发表期刊	PHYSICAL REVIEW B
ISSN	2469-9950
卷号	101 期号:8 页码:7
摘要	By means of first-principles calculations and a modeling analysis, we have predicted that traditional two-dimensional graphene hosts four types of topological phononic Dirac points (DPs) and a phononic nodal ring (PNR) in its phonon spectrum. In the phonon spectrum of graphene, there exist four types of DPs, DP1, DP2, DP3, and DP4, with both DP1 and DP2 located at the Brillouin zone (BZ) corners K and K', DP3 located along the Gamma-K line, and DP4 located along the Gamma-M line, as well as the PNR surrounding the centered Gamma point in the q(x,y) plane. The calculations further reveal that Berry curvatures are vanishingly zero throughout the whole BZ, except for the positions of these four Dirac phonons, at which the nonzero singular Berry curvatures appear with a Berry phase of pi or -pi, confirming its topological nontrivial nature. The topologically protected nontrivial phononic edge states have been also evidenced along both the zigzag-edged and armchair-edged boundaries. These results may pave the way for further studies of the topological phononic properties of graphene, such as phononic destructive interference with a suppression of backscattering and intrinsic phononic quantum Hall-like effects.
资助者	National Science Fund for Distinguished Young Scholars ; National Natural Science Foundation of China
DOI	10.1103/PhysRevB.101.081403
收录类别	SCI
语种	英语
资助项目	National Science Fund for Distinguished Young Scholars[51725103] ; National Natural Science Foundation of China[51671193]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000513212100002
出版者	AMER PHYSICAL SOC
引用统计	被引频次：81[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/137217
专题	中国科学院金属研究所
通讯作者	Chen, Xing-Qiu
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 3.Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat ICQD, Hefei Natl Lab Phys Sci Microscale, Hefei 110016, Peoples R China 4.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 110016, Peoples R China
推荐引用方式 GB/T 7714	Li, Jiangxu,Wang, Lei,Liu, Jiaxi,et al. Topological phonons in graphene[J]. PHYSICAL REVIEW B,2020,101(8):7.
APA	Li, Jiangxu,Wang, Lei,Liu, Jiaxi,Li, Ronghan,Zhang, Zhenyu,&Chen, Xing-Qiu.(2020).Topological phonons in graphene.PHYSICAL REVIEW B,101(8),7.
MLA	Li, Jiangxu,et al."Topological phonons in graphene".PHYSICAL REVIEW B 101.8(2020):7.