| In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells | |
| Wang, Gaoxiang1,3; Wang, Lipeng1,3; Qiu, Jianhang1; Yan, Zheng1; Li, Changji1; Dai, Chunli1; Zhen, Chao1; Tai, Kaiping1; Yu, Wei1,2; Jiang, Xin1 | |
| Corresponding Author | Qiu, Jianhang(jhqiu@imr.ac.cn) ; Yu, Wei(yuwei@hbu.edu.cn) ; Jiang, Xin(xjiang@imr.ac.cn) |
| 2020-02-12 | |
| Source Publication | ACS APPLIED MATERIALS & INTERFACES
 |
| ISSN | 1944-8244 |
| Volume | 12Issue:6Pages:7690-7700 |
| Abstract | Despite the rocketing rise in power conversion efficiencies (PCEs), the performance of perovskite solar cells (PSCs) is still limited by the carrier transfer loss at the interface between perovskite (PVSK) absorbers and charge transporting layers. Here, we propose a novel in situ passivation strategy by using [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) to improve the charge dynamics at the rear PVSK/CTL interface in the n-i-p structure device. A pre-deposited PCBM-doped PbI2 layer is redissolved during PVSK deposition in our routine, establishing a bottom-up PCBM gradient that is facile for charge extraction. Meanwhile, the surface defects are in situ-passivated via PCBM-PVSK interaction, which substantially suppresses the trap-assisted recombination at the rear interface. Due to the synergistic effect of charge-extraction promotion and trap passivation, the fabricated PSCs deliver a champion PCE of 20.10% with attenuated hysteresis and improved long-term stability, much higher than the 18.39% of the reference devices. Our work demonstrates a promising interfacial engineering strategy for further improving the performance of PSCs. |
| Keyword | perovskite solar cells in situ passivation interfacial defects charge extraction gradient |
| Funding Organization | National Nature Science Foundation of China ; Young Talent Program of Shenyang National Laboratory for Materials Science |
| DOI | 10.1021/acsami.9b18572 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Nature Science Foundation of China[51402308] ; Young Talent Program of Shenyang National Laboratory for Materials Science[2017FP29] |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000514256400093 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/137461 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Qiu, Jianhang; Yu, Wei; Jiang, Xin |
| Affiliation | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, Shenyang 110016, Peoples R China 2.Hebei Univ, Hebei Key Lab Opt Informat & Mat, Natl Local Joint Engn Lab New Energy Photoelect D, Coll Phys Sci & Technol, Baoding 071002, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Gaoxiang,Wang, Lipeng,Qiu, Jianhang,et al. In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(6):7690-7700. |
| APA | Wang, Gaoxiang.,Wang, Lipeng.,Qiu, Jianhang.,Yan, Zheng.,Li, Changji.,...&Jiang, Xin.(2020).In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells.ACS APPLIED MATERIALS & INTERFACES,12(6),7690-7700. |
| MLA | Wang, Gaoxiang,et al."In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells".ACS APPLIED MATERIALS & INTERFACES 12.6(2020):7690-7700. |
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