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In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells
Wang, Gaoxiang1,3; Wang, Lipeng1,3; Qiu, Jianhang1; Yan, Zheng1; Li, Changji1; Dai, Chunli1; Zhen, Chao1; Tai, Kaiping1; Yu, Wei1,2; Jiang, Xin1
Corresponding AuthorQiu, Jianhang(jhqiu@imr.ac.cn) ; Yu, Wei(yuwei@hbu.edu.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
2020-02-12
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume12Issue:6Pages:7690-7700
AbstractDespite the rocketing rise in power conversion efficiencies (PCEs), the performance of perovskite solar cells (PSCs) is still limited by the carrier transfer loss at the interface between perovskite (PVSK) absorbers and charge transporting layers. Here, we propose a novel in situ passivation strategy by using [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) to improve the charge dynamics at the rear PVSK/CTL interface in the n-i-p structure device. A pre-deposited PCBM-doped PbI2 layer is redissolved during PVSK deposition in our routine, establishing a bottom-up PCBM gradient that is facile for charge extraction. Meanwhile, the surface defects are in situ-passivated via PCBM-PVSK interaction, which substantially suppresses the trap-assisted recombination at the rear interface. Due to the synergistic effect of charge-extraction promotion and trap passivation, the fabricated PSCs deliver a champion PCE of 20.10% with attenuated hysteresis and improved long-term stability, much higher than the 18.39% of the reference devices. Our work demonstrates a promising interfacial engineering strategy for further improving the performance of PSCs.
Keywordperovskite solar cells in situ passivation interfacial defects charge extraction gradient
Funding OrganizationNational Nature Science Foundation of China ; Young Talent Program of Shenyang National Laboratory for Materials Science
DOI10.1021/acsami.9b18572
Indexed BySCI
Language英语
Funding ProjectNational Nature Science Foundation of China[51402308] ; Young Talent Program of Shenyang National Laboratory for Materials Science[2017FP29]
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000514256400093
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/137461
Collection中国科学院金属研究所
Corresponding AuthorQiu, Jianhang; Yu, Wei; Jiang, Xin
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, Shenyang 110016, Peoples R China
2.Hebei Univ, Hebei Key Lab Opt Informat & Mat, Natl Local Joint Engn Lab New Energy Photoelect D, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Wang, Gaoxiang,Wang, Lipeng,Qiu, Jianhang,et al. In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(6):7690-7700.
APA Wang, Gaoxiang.,Wang, Lipeng.,Qiu, Jianhang.,Yan, Zheng.,Li, Changji.,...&Jiang, Xin.(2020).In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells.ACS APPLIED MATERIALS & INTERFACES,12(6),7690-7700.
MLA Wang, Gaoxiang,et al."In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells".ACS APPLIED MATERIALS & INTERFACES 12.6(2020):7690-7700.
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