In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells

doi:10.1021/acsami.9b18572

IMR OpenIR

	In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells
	Wang, Gaoxiang 1,3; Wang, Lipeng 1,3; Qiu, Jianhang 1; Yan, Zheng 1; Li, Changji 1; Dai, Chunli 1; Zhen, Chao 1; Tai, Kaiping 1; Yu, Wei 1,2; Jiang, Xin 1
通讯作者	Qiu, Jianhang(jhqiu@imr.ac.cn) ; Yu, Wei(yuwei@hbu.edu.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
	2020-02-12
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	12 期号:6 页码:7690-7700
摘要	Despite the rocketing rise in power conversion efficiencies (PCEs), the performance of perovskite solar cells (PSCs) is still limited by the carrier transfer loss at the interface between perovskite (PVSK) absorbers and charge transporting layers. Here, we propose a novel in situ passivation strategy by using [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) to improve the charge dynamics at the rear PVSK/CTL interface in the n-i-p structure device. A pre-deposited PCBM-doped PbI2 layer is redissolved during PVSK deposition in our routine, establishing a bottom-up PCBM gradient that is facile for charge extraction. Meanwhile, the surface defects are in situ-passivated via PCBM-PVSK interaction, which substantially suppresses the trap-assisted recombination at the rear interface. Due to the synergistic effect of charge-extraction promotion and trap passivation, the fabricated PSCs deliver a champion PCE of 20.10% with attenuated hysteresis and improved long-term stability, much higher than the 18.39% of the reference devices. Our work demonstrates a promising interfacial engineering strategy for further improving the performance of PSCs.
关键词	perovskite solar cells in situ passivation interfacial defects charge extraction gradient
资助者	National Nature Science Foundation of China ; Young Talent Program of Shenyang National Laboratory for Materials Science
DOI	10.1021/acsami.9b18572
收录类别	SCI
语种	英语
资助项目	National Nature Science Foundation of China[51402308] ; Young Talent Program of Shenyang National Laboratory for Materials Science[2017FP29]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000514256400093
出版者	AMER CHEMICAL SOC
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/137461
专题	中国科学院金属研究所
通讯作者	Qiu, Jianhang; Yu, Wei; Jiang, Xin
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, Shenyang 110016, Peoples R China 2.Hebei Univ, Hebei Key Lab Opt Informat & Mat, Natl Local Joint Engn Lab New Energy Photoelect D, Coll Phys Sci & Technol, Baoding 071002, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Wang, Gaoxiang,Wang, Lipeng,Qiu, Jianhang,et al. In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(6):7690-7700.
APA	Wang, Gaoxiang.,Wang, Lipeng.,Qiu, Jianhang.,Yan, Zheng.,Li, Changji.,...&Jiang, Xin.(2020).In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells.ACS APPLIED MATERIALS & INTERFACES,12(6),7690-7700.
MLA	Wang, Gaoxiang,et al."In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells".ACS APPLIED MATERIALS & INTERFACES 12.6(2020):7690-7700.