| The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations | |
| Tian, X. H.1,2; Wang, Y. J.1; Tang, Y. L.1; Zhu, Y. L.1; Ma, X. L.1,3 | |
| Corresponding Author | Wang, Y. J.(yjwang@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn) |
| 2020-03-07 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| ISSN | 0021-8979 |
| Volume | 127Issue:9Pages:6 |
| Abstract | Domain walls in ferroelectric materials attract great interest since they can possess fascinating functionalities. Therefore, it is very important to modulate domain structures. Our recent experiments showed that oxygen vacancy plates could induce charged domain walls with different types. However, the detailed transition behavior between different charged domain walls was not explored. In this work, systematical phase field simulations were performed to reveal the evolution of domain structures with the size and charge density of the oxygen vacancy plate. These results could provide a route to build complex patterns of charged domain walls. |
| Funding Organization | Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China (NNSFC) ; Shenyang National Laboratory for Materials Sciences ; Youth Innovation Promotion Association CAS |
| DOI | 10.1063/1.5144160 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China (NNSFC)[51671194] ; National Natural Science Foundation of China (NNSFC)[51971223] ; National Natural Science Foundation of China (NNSFC)[51922100] ; Shenyang National Laboratory for Materials Sciences[L2019R06] ; Shenyang National Laboratory for Materials Sciences[L2019R08] ; Shenyang National Laboratory for Materials Sciences[L2019F01] ; Shenyang National Laboratory for Materials Sciences[L2019F13] ; Youth Innovation Promotion Association CAS[2016177] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000519115300002 |
| Publisher | AMER INST PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/137629 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, Y. J.; Ma, X. L. |
| Affiliation | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Non Ferrous Me, 287 Langongping Rd, Lanzhou 730050, Peoples R China |
| Recommended Citation GB/T 7714 | Tian, X. H.,Wang, Y. J.,Tang, Y. L.,et al. The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations[J]. JOURNAL OF APPLIED PHYSICS,2020,127(9):6. |
| APA | Tian, X. H.,Wang, Y. J.,Tang, Y. L.,Zhu, Y. L.,&Ma, X. L..(2020).The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations.JOURNAL OF APPLIED PHYSICS,127(9),6. |
| MLA | Tian, X. H.,et al."The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations".JOURNAL OF APPLIED PHYSICS 127.9(2020):6. |
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