The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations

doi:10.1063/1.5144160

IMR OpenIR

	The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations
	Tian, X. H.1,2; Wang, Y. J.1; Tang, Y. L.1; Zhu, Y. L.1; Ma, X. L.1,3
通讯作者	Wang, Y. J.(yjwang@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn)
	2020-03-07
发表期刊	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
卷号	127 期号:9 页码:6
摘要	Domain walls in ferroelectric materials attract great interest since they can possess fascinating functionalities. Therefore, it is very important to modulate domain structures. Our recent experiments showed that oxygen vacancy plates could induce charged domain walls with different types. However, the detailed transition behavior between different charged domain walls was not explored. In this work, systematical phase field simulations were performed to reveal the evolution of domain structures with the size and charge density of the oxygen vacancy plate. These results could provide a route to build complex patterns of charged domain walls.
资助者	Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China (NNSFC) ; Shenyang National Laboratory for Materials Sciences ; Youth Innovation Promotion Association CAS
DOI	10.1063/1.5144160
收录类别	SCI
语种	英语
资助项目	Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China (NNSFC)[51671194] ; National Natural Science Foundation of China (NNSFC)[51971223] ; National Natural Science Foundation of China (NNSFC)[51922100] ; Shenyang National Laboratory for Materials Sciences[L2019R06] ; Shenyang National Laboratory for Materials Sciences[L2019R08] ; Shenyang National Laboratory for Materials Sciences[L2019F01] ; Shenyang National Laboratory for Materials Sciences[L2019F13] ; Youth Innovation Promotion Association CAS[2016177]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000519115300002
出版者	AMER INST PHYSICS
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/137629
专题	中国科学院金属研究所
通讯作者	Wang, Y. J.; Ma, X. L.
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Non Ferrous Me, 287 Langongping Rd, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Tian, X. H.,Wang, Y. J.,Tang, Y. L.,et al. The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations[J]. JOURNAL OF APPLIED PHYSICS,2020,127(9):6.
APA	Tian, X. H.,Wang, Y. J.,Tang, Y. L.,Zhu, Y. L.,&Ma, X. L..(2020).The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations.JOURNAL OF APPLIED PHYSICS,127(9),6.
MLA	Tian, X. H.,et al."The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations".JOURNAL OF APPLIED PHYSICS 127.9(2020):6.