Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors

doi:10.3390/cryst10030144

IMR OpenIR

	Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
	Xia, Xiuxin 1,2; Sun, Xingdan 1,2; Wang, Hanwen 1,2; Li, Xiaoxi 1,2,3
通讯作者	Wang, Hanwen(hwwang15s@imr.ac.cn) ; Li, Xiaoxi(xxli@imr.ac.cn)
	2020-03-01
发表期刊	CRYSTALS
ISSN	2073-4352
卷号	10 期号:3 页码:9
摘要	Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities for nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes for device applications. Here, we report a method on fabricating electrode contacts to few-layered GaTe field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves and on/off ratio of similar to 104 on HfO2 substrates. Kelvin probe force microscope (KPFM) and energy dispersion spectrum (EDS) are performed to characterize the electrode contacts, suggesting that the lowered Schottky barrier by the diffusion of Pd element into the GaTe conduction channel may play an important role. Our findings provide a strategy for the engineering of electrode contact for future device applications based on 2DLMs.
关键词	contact alloying GaTe Pd electrode
资助者	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC)
DOI	10.3390/cryst10030144
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2019YFA0307800] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[51627801]
WOS研究方向	Crystallography ; Materials Science
WOS类目	Crystallography ; Materials Science, Multidisciplinary
WOS记录号	WOS:000523512100062
出版者	MDPI
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/137888
专题	中国科学院金属研究所
通讯作者	Wang, Hanwen; Li, Xiaoxi
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
推荐引用方式 GB/T 7714	Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,et al. Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors[J]. CRYSTALS,2020,10(3):9.
APA	Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,&Li, Xiaoxi.(2020).Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors.CRYSTALS,10(3),9.
MLA	Xia, Xiuxin,et al."Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors".CRYSTALS 10.3(2020):9.