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Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
Geng, W. R.1,2; Tian, X. H.1,2; Jiang, Y. X.1; Zhu, Y. L.1; Tang, Y. L.1; Wang, Y. J.1; Zou, M. J.1,2; Feng, Y. P.1,3; Wu, B.1,2; Hu, W. T.1,2; Ma, X. L.1,4
Corresponding AuthorZhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn)
2020-03-01
Source PublicationACTA MATERIALIA
ISSN1359-6454
Volume186Pages:68-76
AbstractManipulation of electronic states in functional ferroelectrics is promising for next generation electronics devices. The charged domain walls in ferroelectric materials especially facilitate the electronic state modulation and are promising for developing interface-based devices. However, the major challenges impeding the application are their intentional manipulation and the elusive pinning behavior. Here, results that charged domain walls in BiFeO3 films can be pinned and regulated by oxygen vacancy planar distributions controlled by oxygen pressure during film growth are reported. Using aberration-corrected scanning transmission electron microscopy complemented by theoretical simulations, rich pinning behavior of tail-to-tail charged domain walls by oxygen vacancy plates is revealed. At high annealing oxygen pressure, 71 degrees charged domain walls are stabilized by narrow vacancy plates. Decreasing the oxygen pressure, the transformation from 71 degrees to 109 degrees charged domain walls happens by expanding the vacancy plates, as collaborated by phase field simulations. Besides, the 71 degrees-109 degrees charged domain wall pairs are stabilized due to further interaction between two neighboring vacancy plates. These results provide the active modulation of the electronic states and illuminate the rich pinning behavior of domain walls by vacancy defects in ferroelectrics, which in turn could provide implications for designing potential electronics devices. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
KeywordBiFeO3 films Oxygen vacancy plates Charged domain wall pinning Aberration-corrected scanning transmission electron microscopies Phase field simulations
Funding OrganizationKey Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; National Basic Research Program of China ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS
DOI10.1016/j.actamat.2019.12.041
Indexed BySCI
Language英语
Funding ProjectKey Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51571197] ; National Basic Research Program of China[2014CB921002] ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS[2016177]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000518698300007
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/137944
Collection中国科学院金属研究所
Corresponding AuthorZhu, Y. L.; Ma, X. L.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Jinzhai Rd 96, Hefei 230026, Peoples R China
3.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China
4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China
Recommended Citation
GB/T 7714
Geng, W. R.,Tian, X. H.,Jiang, Y. X.,et al. Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects[J]. ACTA MATERIALIA,2020,186:68-76.
APA Geng, W. R..,Tian, X. H..,Jiang, Y. X..,Zhu, Y. L..,Tang, Y. L..,...&Ma, X. L..(2020).Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects.ACTA MATERIALIA,186,68-76.
MLA Geng, W. R.,et al."Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects".ACTA MATERIALIA 186(2020):68-76.
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