Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects

doi:10.1016/j.actamat.2019.12.041

IMR OpenIR

	Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
	Geng, W. R.1,2; Tian, X. H.1,2; Jiang, Y. X.1; Zhu, Y. L.1; Tang, Y. L.1; Wang, Y. J.1; Zou, M. J.1,2; Feng, Y. P.1,3; Wu, B.1,2; Hu, W. T.1,2; Ma, X. L.1,4
通讯作者	Zhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn)
	2020-03-01
发表期刊	ACTA MATERIALIA
ISSN	1359-6454
卷号	186 页码:68-76
摘要	Manipulation of electronic states in functional ferroelectrics is promising for next generation electronics devices. The charged domain walls in ferroelectric materials especially facilitate the electronic state modulation and are promising for developing interface-based devices. However, the major challenges impeding the application are their intentional manipulation and the elusive pinning behavior. Here, results that charged domain walls in BiFeO3 films can be pinned and regulated by oxygen vacancy planar distributions controlled by oxygen pressure during film growth are reported. Using aberration-corrected scanning transmission electron microscopy complemented by theoretical simulations, rich pinning behavior of tail-to-tail charged domain walls by oxygen vacancy plates is revealed. At high annealing oxygen pressure, 71 degrees charged domain walls are stabilized by narrow vacancy plates. Decreasing the oxygen pressure, the transformation from 71 degrees to 109 degrees charged domain walls happens by expanding the vacancy plates, as collaborated by phase field simulations. Besides, the 71 degrees-109 degrees charged domain wall pairs are stabilized due to further interaction between two neighboring vacancy plates. These results provide the active modulation of the electronic states and illuminate the rich pinning behavior of domain walls by vacancy defects in ferroelectrics, which in turn could provide implications for designing potential electronics devices. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词	BiFeO3 films Oxygen vacancy plates Charged domain wall pinning Aberration-corrected scanning transmission electron microscopies Phase field simulations
资助者	Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; National Basic Research Program of China ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS
DOI	10.1016/j.actamat.2019.12.041
收录类别	SCI
语种	英语
资助项目	Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51571197] ; National Basic Research Program of China[2014CB921002] ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS[2016177]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000518698300007
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：24[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/137944
专题	中国科学院金属研究所
通讯作者	Zhu, Y. L.; Ma, X. L.
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Jinzhai Rd 96, Hefei 230026, Peoples R China 3.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China 4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Geng, W. R.,Tian, X. H.,Jiang, Y. X.,et al. Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects[J]. ACTA MATERIALIA,2020,186:68-76.
APA	Geng, W. R..,Tian, X. H..,Jiang, Y. X..,Zhu, Y. L..,Tang, Y. L..,...&Ma, X. L..(2020).Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects.ACTA MATERIALIA,186,68-76.
MLA	Geng, W. R.,et al."Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects".ACTA MATERIALIA 186(2020):68-76.