| High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors | |
| Zhang, Jian1,2; Liu, Yiting1; Zhang, Xinglai2; Ma, Zongyi2; Li, Jing2; Zhang, Cai2; Shaikenova, Altynay3; Renat, Beisenov3; Liu, Baodan2 | |
| Corresponding Author | Zhang, Xinglai(zhangxl@imr.ac.cn) ; Liu, Baodan(baodanliu@imr.ac.cn) |
| 2020-03-20 | |
| Source Publication | CHEMISTRYSELECT
 |
| ISSN | 2365-6549 |
| Volume | 5Issue:11Pages:3438-3444 |
| Abstract | Two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have recently attracted extensive interest for building future optoelectronic devices. However, the limited light absorption, low photoresponsivity and slow response speed in visible range inhibit their further application. Here, we proposed a promising approach to realize the high-performance photodetectors (PDs) by constructing 2D-MoS2 flake/1D-ZnO nanowire mixed-dimensional heterostructures. The integration of 1D-ZnO on p-type or n-type MoS2 to form the mixed-dimensional 2D-MoS2/1D-ZnO heterostructure PDs not only broadens the light response range, but also improves the photoresponsivity and response time of 2D-MoS2 flakes. Under the 365 nm light illumination, the photoresponsivity, external quantum efficiency and response time of p-MoS2/n-ZnO PDs are as high as 24.36 A/W, 8.28x10(3) % and 0.9 s, respectively. Under 532 nm light illumination, the photoresponsivity, external quantum efficiency and response time are estimated to be 0.35 A/W, 80.9 % and 140 ms, respectively. These properties are superior or comparable to the performance of other reported 2D-MoS2 flake PDs. This work provides a possible strategy for the realization of high-performance optoelectronic devices by the integration of 2D-MoS2 and 1D-ZnO to form mixed-dimensional heterostructures. |
| Keyword | Heterostructure low-dimension molybdenum disulfide photodetectors zinc oxide |
| Funding Organization | Shenyang Science and Technology Program ; National Natural Science Foundation of China ; Liaoning Province Natural Science Fund Proram ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University) |
| DOI | 10.1002/slct.202000746 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Shenyang Science and Technology Program[18-013-0-52] ; National Natural Science Foundation of China[51702326] ; National Natural Science Foundation of China[51872296] ; Liaoning Province Natural Science Fund Proram[2019MS-333] ; Youth Innovation Promotion Association, Chinese Academy of Sciences[2019197] ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)[OEMT-2017-KF-02] |
| WOS Research Area | Chemistry |
| WOS Subject | Chemistry, Multidisciplinary |
| WOS ID | WOS:000520610800039 |
| Publisher | WILEY-V C H VERLAG GMBH |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/138033 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhang, Xinglai; Liu, Baodan |
| Affiliation | 1.Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang 110870, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Satbayev Univ, Dept Engn Phys, Alma Ata 050013, Kazakhstan |
| Recommended Citation GB/T 7714 | Zhang, Jian,Liu, Yiting,Zhang, Xinglai,et al. High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors[J]. CHEMISTRYSELECT,2020,5(11):3438-3444. |
| APA | Zhang, Jian.,Liu, Yiting.,Zhang, Xinglai.,Ma, Zongyi.,Li, Jing.,...&Liu, Baodan.(2020).High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors.CHEMISTRYSELECT,5(11),3438-3444. |
| MLA | Zhang, Jian,et al."High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors".CHEMISTRYSELECT 5.11(2020):3438-3444. |
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