Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering | |
Zhang, Xinglai1; Zhang, Jian1; Leng, Bing2; Li, Jing1; Ma, Zongyi1; Yang, Wenjin1; Liu, Fei3,4; Liu, Baodan1 | |
Corresponding Author | Liu, Baodan(baodanliu@imr.ac.cn) |
2019-12-06 | |
Source Publication | ADVANCED MATERIALS INTERFACES
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ISSN | 2196-7350 |
Volume | 6Issue:23Pages:8 |
Abstract | The piezo-phototronic effect can effectively engineer the energy band structure at the local interface of piezo-semiconductor junction, and thus improve the performance of optoelectronics. In this work, a high-performance poly(9-vinylcarbazole) (PVK)/ZnO nanorods/graphene heterostructure photodetector is designed and fabricated using a multi-step process. By introducing a -1.093% compressive strain to the hybrid heterostructure, carrier-dynamics modulation at the local junctions can be induced by the piezoelectric polarization, and the photoresponsivity and the specific detectivity of the photodetector can be enhanced approximate to 440% and approximate to 132% under UV light illumination with the peak values up to 80.6 A W-1 and 2.3 x 10(11) Jones, respectively. The photoresponse enhancement is attributed to the piezopotential generated at PVK/ZnO and ZnO/graphene interfaces, which promote the separation and transfer of photogenerated carriers. Physical working mechanism behind the observed results is discussed via energy band diagram. This work not only presents a new way to achieve the higher performance in photodetectors by fully utilizing piezo-phototronic interface engineering but also provides a deep understanding of piezo-phototronic effect on optoelectronic devices. |
Keyword | graphene heterojunction photodetectors piezo-phototronic effect ZnO nanorods |
Funding Organization | National Natural Science Foundation of China ; Shenyang Science and Technology Program ; Youth Innovation Promotion Association of the Chinese Academy of Sciences ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University) |
DOI | 10.1002/admi.201901365 |
Indexed By | SCI |
Language | 英语 |
Funding Project | National Natural Science Foundation of China[51702326] ; National Natural Science Foundation of China[51872296] ; Shenyang Science and Technology Program[18-013-0-52] ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2019197] ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)[OEMT-2017-KF-02] |
WOS Research Area | Chemistry ; Materials Science |
WOS Subject | Chemistry, Multidisciplinary ; Materials Science, Multidisciplinary |
WOS ID | WOS:000527330100016 |
Publisher | WILEY |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/138238 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Liu, Baodan |
Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.China Med Univ, Affiliated Hosp 1, Dept Plast Surg, Shenyang 110001, Peoples R China 3.Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China 4.Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China |
Recommended Citation GB/T 7714 | Zhang, Xinglai,Zhang, Jian,Leng, Bing,et al. Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering[J]. ADVANCED MATERIALS INTERFACES,2019,6(23):8. |
APA | Zhang, Xinglai.,Zhang, Jian.,Leng, Bing.,Li, Jing.,Ma, Zongyi.,...&Liu, Baodan.(2019).Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering.ADVANCED MATERIALS INTERFACES,6(23),8. |
MLA | Zhang, Xinglai,et al."Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering".ADVANCED MATERIALS INTERFACES 6.23(2019):8. |
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