| Interface facilitated transformation of voids directly into stacking fault tetrahedra | |
| Kong, X. F.1,2; Gao, N.3,4,5; Beyerlein, I. J.6; Yao, B. N.1,2,7; Zheng, S. J.8,9; Ma, X. L.8; Legut, D.10,11; Germann, T. C.12; Zhang, H. J.13,14; Zhang, R. F.1,2 | |
| Corresponding Author | Zheng, S. J.(sjzheng@imr.ac.cn) ; Zhang, R. F.(zrf@buaa.edu.cn) |
| 2020-04-15 | |
| Source Publication | ACTA MATERIALIA
 |
| ISSN | 1359-6454 |
| Volume | 188Pages:623-634 |
| Abstract | Voids, helium bubbles and stacking fault tetrahedra (SFTs) are common irradiation-induced defects in face-centered cubic (FCC) metals and their alloys that have detrimental effects on their deformation behavior and lifetime. The formation mechanisms of voids and SFTs have been investigated in single crystals but the potential augmentation of these mechanisms by a heterophase interface has not been well studied. Here, using transmission electron microscopy (TEM), we report on the stability of both SFTs and voids at interfaces in an irradiated Cu/Ag nanolayered composite. With atomistic simulations, we show that the heterophase interface can promote the transformation of voids ( <2 nm diameter) directly into SFTs. The interfacial misfit dislocations generate an atomically varying stress field that substantially reduces the activation barrier for the transformation at an interface compared to that in a single crystal or coherent interface. The transformation mechanism involves the sequential hopping of vacancies, starting at the interface and then later progressing to the nearest and next nearest atomic layers. The calculations further show that just a few helium atoms can hinder this mechanism and stabilize interfacial voids, explaining the coexistence of voids and SFTs near the interface observed experimentally. Last, the effect of stabilized defects at the interface on dislocation nucleation is studied via atomistic calculations employing quasi-static loading schemes. The results indicate that both voids and SFTs promote interfacial dislocation nucleation, which, in turn, damages the SFTs. These findings can provide the insight needed to design strategies for healing irradiation defects by interface engineering. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| Keyword | Voids Stacking fault tetrahedron Interface Transformation Dislocation Damage |
| Funding Organization | National Key Research and Development Program of China ; National Natural Science Foundation of China ; 111 Project ; Academic Excellence Foundation of BUAA for PhD Students ; European Regional Development Fund in the IT4Innovations National Supercomputing Center -Path to Exascale project within the Operational Programme Research Development and Education ; SGS |
| DOI | 10.1016/j.actamat.2020.02.044 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key Research and Development Program of China[2016YFC1102500] ; National Key Research and Development Program of China[2017YFB0702100] ; National Natural Science Foundation of China[51471018] ; National Natural Science Foundation of China[51672015] ; National Natural Science Foundation of China[51401208] ; National Natural Science Foundation of China[51771201] ; National Natural Science Foundation of China[11675230] ; National Natural Science Foundation of China[11375242] ; 111 Project[B17002] ; Academic Excellence Foundation of BUAA for PhD Students ; European Regional Development Fund in the IT4Innovations National Supercomputing Center -Path to Exascale project within the Operational Programme Research Development and Education[CZ.02.1.01/0.0/0.0/16_013/0001791] ; SGS[SP2020/150] |
| WOS Research Area | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000527826500054 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/138403 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zheng, S. J.; Zhang, R. F. |
| Affiliation | 1.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China 2.Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China 3.Shandong Univ, Inst Frontier & Interdisciplinary Sci, Qingdao 266237, Peoples R China 4.Shandong Univ, Key Lab Particle Phys & Particle Irradiat MOE, Qingdao 266237, Peoples R China 5.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 6.Univ Calif Santa Barbara, Mech Engn Dept, Mat Dept, Santa Barbara, CA 93106 USA 7.Beihang Univ, Shen Yuan Honors Coll, Beijing 100191, Peoples R China 8.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 9.Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin Key Lab Mat Laminating Fabricat & Interfa, Tianjin 300130, Peoples R China 10.VSB Tech Univ Ostrava, IT4Innovat, CZ-70800 Ostrava, Czech Republic 11.VSB Tech Univ Ostrava, Nanotechnol Ctr, CZ-70800 Ostrava, Czech Republic 12.Los Alamos Natl Lab, Theoret Div, Santa Fe, NM 87545 USA 13.Natl United Engn Lab Biomed Mat Modificat, Dezhou 251100, Peoples R China 14.Tongji Univ, Dept Vasc & Intervent, Peoples Hosp 10, Shanghai 200072, Peoples R China |
| Recommended Citation GB/T 7714 | Kong, X. F.,Gao, N.,Beyerlein, I. J.,et al. Interface facilitated transformation of voids directly into stacking fault tetrahedra[J]. ACTA MATERIALIA,2020,188:623-634. |
| APA | Kong, X. F..,Gao, N..,Beyerlein, I. J..,Yao, B. N..,Zheng, S. J..,...&Zhang, R. F..(2020).Interface facilitated transformation of voids directly into stacking fault tetrahedra.ACTA MATERIALIA,188,623-634. |
| MLA | Kong, X. F.,et al."Interface facilitated transformation of voids directly into stacking fault tetrahedra".ACTA MATERIALIA 188(2020):623-634. |
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